Red InGaN-based light-emitting diodes with a novel europium (III) tetrabasic complex as mono-phosphor

N.J. Xiang,Louis M. Leung,Shu Kong So,Jing Wang,Qiang Su,M.L. Gong
DOI: https://doi.org/10.1016/j.matlet.2006.02.013
IF: 3
2006-01-01
Materials Letters
Abstract:A novel europium (III) tetrabasic complex, Eu (TPBDTFA)2 (TPATFA) Phen, was designed and synthesized. Photoluminescence measurements show that the complex exhibits strongly red emission due to the 5D0–7FJ transitions of Eu3+ ions with appropriate CIE (Commission Internationale de l'Eclairage, International Commission on Illumination) chromaticity coordinates (x=0.64, y=0.35) under 230–470nm light excitation. The luminescence quantum yield for the Eu3+ complex is 0.126. Thermogravimetric analysis (TGA) confirms highly thermal stability of the complex with a decomposition temperature of 383.4°C. All the characteristics indicate that the Eu3+ complex is highly efficiently red phosphor suitable to be excited by near UV–violet light. An intense red-emitting LED was fabricated by combining the mono-phosphor Eu (TPBDTFA)2 (TPATFA) Phen with a ∼395nm emitting InGaN chip.
What problem does this paper attempt to address?