High Quantum Yield Gd 4.67 Si 3 O 13 :Eu 3+ Red-Emitting Phosphor for Tunable White Light-Emitting Devices Driven by UV or Blue LED
Wanggui Ye,Chong Zhao,Xiaofei Shen,Chaoyang Ma,Zhonghua Deng,Yanbin Li,Yuzhen Wang,Chuandong Zuo,Zicheng Wen,Yingkui Li,Xuanyi Yuan,Chong Wang,Yongge Cao
DOI: https://doi.org/10.1021/acsaelm.1c00012
IF: 4.494
2021-03-14
ACS Applied Electronic Materials
Abstract:Eu<sup>3+</sup>-activated oxide components appear as a kind of rare-earth red phosphors that can be used for warm white light-emitting diode (LEDs). At present, it is still a challenge to synthesize oxide-component phosphors with high photoluminescence quantum yields compared to those of nitride and fluoride red phosphors. Herein, we propose a kind of Eu<sup>3+</sup>-activated Gd<sub>4.67</sub>Si<sub>3</sub>O<sub>13</sub> rare-earth silicate phosphor by the convenient high-temperature solid reaction method. These designed phosphors can be effectively excited by either 394 nm near-ultraviolet light or 465 nm blue light and then emit red light at a dominant wavelength of 615 nm. Particularly, for the optimal Eu<sup>3+</sup>-concentration-activated Gd<sub>3.67</sub>EuSi<sub>3</sub>O<sub>13</sub> phosphor, photoluminescence quantum yields are measured to be above 80%, which is superior to that of the general rare-earth oxide salt phosphor and comparable to that of commercial rare-earth nitride red phosphors such as Ca-α-SiAlON:Eu<sup>2+</sup> (QY = 70.5%) and CaAlSiN<sub>3</sub>:Ce<sup>3+</sup> (QY = 80%). Packaged with commercial yellow phosphor Ce<sup>3+</sup>:YAG and UV or blue LED chip, our red component serves to improve the CRI and CCT for the tunable white light-emitting devices. Moreover, the phosphor has good thermal cycling stability with a thermal-quenching activation energy of 0.28912 eV. Finally, the temperature-dependent properties make the Gd<sub>4.67</sub>Si<sub>3</sub>O<sub>13</sub>:Eu<sup>3+</sup> phosphors have potential application in optical temperature measurement systems. The maximum relative sensitivity <i>S</i><sub>r</sub> is found to be 1.05 × 10<sup>–2</sup> K<sup>–1</sup> at 456 K.This article has not yet been cited by other publications.
materials science, multidisciplinary,engineering, electrical & electronic