Modification of the electrical properties of polyimide by irradiation with 80 keV Xe ions

Tianxiang Chen,Shude Yao,Kun Wang,Huan Wang,Shengqiang Zhou
DOI: https://doi.org/10.1016/j.surfcoat.2009.06.006
IF: 4.865
2009-01-01
Surface and Coatings Technology
Abstract:We modify the electrical properties of polyimide (PI) films by irradiation with 80 keV Xe ions. The surface resistivity of irradiated PI film at room temperature decreases remarkably from 1.2×1014 Ω/□ for virgin PI film to 3.15×106 Ω/□ for PI film irradiated by 5.0×1016 ions/cm2, and the temperature dependence of the resistivity of the treated films is well-fit using Mott's Equation. The irradiated PI film structure is studied using Raman spectroscopy, X-ray diffraction, and Rutherford Backscattering Spectrometry. The concentration of O in the irradiated layer decreases with increasing fluence, while the variation of N concentration is negligible. Graphite-like carbon-rich phases are created in the irradiated layers, leading to the modification of the electrical properties.
What problem does this paper attempt to address?