On the Theory of the Effect of the Thick Dielectric Film Layers to Ferroelectric Thin Films with Two Surface Layers

WANG Chun-dong,TENG Bao-hua,CHENG Deng-mu,ZHOU Fei

DOI: https://doi.org/10.3969/j.issn.1001-8395.2011.05.018

2011-01-01

Abstract:With the help of the mean-field approximation under the transverse Ising model,the influence of the thick dielectric film layers on the phase transition properties of the ferroelectric thin films with two surface layers was studied.By treating with the model,a recursive equation for the phase transition properties of the ferroelectric thin film with two surface layers and thick dielectric film layers was obtained.The effects of the exchange interaction and the transverse field of the thick dielectric film layer to the phase diagrams were studied as well.Additionally,the influence of the exchange interaction to the crossover value of the transverse field,and the influence of the transverse field on the crossover value of the exchange interaction were also investigated.The results show that the ferroelectric range,the Curie temperature,and the transverse field of the thick dielectric layers all become large,with the exchange interaction of the thick dielectric layers increase.And the exchange interaction of the thick dielectric layers also become large when its transverse field increases,while the ferroelectric range,the Curie temperature become small with the increasing of the transverse field of the thick dielectric layers.Meanwhile,it is also found that the influence of the exchange interaction of the thick dielectric layers on the whole film is larger than its transverse field.At last,the effect of the exchange interaction of the two surface layers on the phase diagram is also shown.The numerical results will be helpful to the fabrication of the thick dielectric ferroelectric film.