Characterization of SnO2 films deposited by d.c. gas discharge activating reaction evaporation onto amorphous and crystalline substrates

Yihua Zhu,Hui Lu,Yuancheng Lu,Xiaoren Pan
DOI: https://doi.org/10.1016/0040-6090(93)90462-X
IF: 2.1
1993-01-01
Thin Solid Films
Abstract:A d.c. gas discharge activating reaction evaporation technique was used to prepare gas-sensitive SnO2 films. The thin films of ultrafine particles and large-area crystallites were grown successfully on glass and SiO2(110) substrates respectively. The films were characterized by X-ray photoelectron spectroscopy, transmission and scanning electron microscopies and X-ray diffraction, and their gas-sensing properties were also investigated. The ultrafine particle film with average particle size of 40 nm exhibited a high sensitivity of 77 at 210-degrees-C to 100 PPM C2H5OH and a good selectivity for detecting C2H5OH in the presence of gasoline gas; the large-area crystalline thin film exhibited a fast response below 2 s to C2H5OH at 330-degrees-C and a remarkable oscillation of the conductivity after pulse exposure to C2H5OH.
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