Effect of MoO_3 Buffer Layer on the Performance of Organic Thin Film Transistor

徐洁,李青,林慧,王洪
DOI: https://doi.org/10.3969/j.issn.1001-0548.2012.06.025
2012-01-01
Abstract:High field effect mobility() organic thin film transistor(OTFT) was fabricated by using MoO3 buffer layer between organic semiconductor(pentacene) and source/drain electrodes(Ag).The hole mobility of OTFT reached 0.26 cm2/Vs and output current IDSachieved more than 50 A when the gate voltage was 40 V.The detailed effect of MoO3buffer layer was analyzed via output characteristics and physical mechanism.
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