Abstract:Polycrystalline α-Ga2O3 thin films containing secondary phase SnO were grown on BaF2 substrates by magnetron sputtering. The impurity tin concentration, electron concentration, and room temperature mobility of the α-Ga2O3 films are 4.5 × 1020 cm−3, 1.5 × 1015 cm−3, and 26.9 cm2 V−1 s−1, respectively, determined by secondary ion mass spectrometry and Hall effect experiments. The mobility vs temperature dependence confirms that the electrons are mainly subject to polar optical phonon scattering and ionized impurity scattering in the temperature range of 160–400 K. Two ionization energies, 29 and 71 meV, were determined for different temperature ranges by logarithmic resistivity vs the reciprocal of temperature, where the former is the shallow donor SnGa formed by the incorporation of tin into gallium sites. The latter is the shallow acceptor VSn–H associated with secondary phase SnO, and it is the electrical compensation of this shallow acceptor that results in the very low carrier concentration of α-Ga2O3 films. The photoluminescence spectrum exhibits 280 and 320 nm UV radiation, where 280 nm is due to the radiation recombination of electrons trapped by the deep donor state (EC−1.1 eV) with holes trapped by the VSn–H complex. In addition, there are several narrow radiation peaks in the visible region, and the energy levels involved in the radiation transitions are determined one by one after excluding the effects of interference and diffraction.

Mobility enhancement of p-type SnO<sub>2</sub>by In-Ga co-doping

Transparent P-Type Conducting Indium-Doped SnO2 Thin Films Deposited by Spray Pyrolysis

P-type Transparent Conducting Indium-Tin Oxide Thin Films Deposited by Spray-pyrolysis

Abnormal Behaviors in Electrical Transport Properties of Cobalt-Doped Tin Oxide Thin Films

P-type Tin–indium Oxide Films Prepared by Thermal Oxidation of Metallic InSn Alloy Films

The Effect of Ⅲ-family Element Doping on Electronic Structures and Electrical Characteristics of SnO2

Atomic-Level Sn Doping Effect in Ga2O3 Films Using Plasma-Enhanced Atomic Layer Deposition

Liquid Ga–In–Sn Alloy Printing of GaInSnO Ultrathin Semiconductor Films and Controllable Performance Field Effect Transistors

Fabrication and characterization of indium-doped p-type SnO2 thin films

Dielectric and Magnetic Properties of (zn, Co) Co-Doped SnO 2 Nanoparticles

Structural and photoluminescence properties of Co-Sputtered p-type Zn-doped β-Ga2O3 thin films on sapphire substrates

High Quality Heavy Sn Doping Β‑ga2o3 Film with High Mobility Grown by Time Division Transport Metal Organic Chemical Vapor Deposition

High mobility and hysteresis free InGaSnO thin film transistors by co-sputtering via low temperature post annealing process

High-temperature Electrical and Thermal Transport Behaviors of In2O3-based Ceramics by Zn-Sn Co-Substitution

Optical and Electrical Transport Properties of Α-Ga2o3 Thin Films with Electrical Compensation of Sn Impurities

P-Type Behavior in In–N Codoped ZnO Thin Films

The electrical conductivity of cubic (In$_{1-x}$Ga$_x$)$_2$O$_3$ films ($x\le0.18$): Native point defects, Sn-doping, and the surface electron accumulation layer

Gallium Doping Dependence of Single-Crystal N-Type Zno Grown by Metal Organic Chemical Vapor Deposition

Impact of boron and indium doping on the structural, electronic and optical properties of SnO2

Achieving p-type conductivity in wide-bandgap SnO 2 by a two-step process