Enhanced photoelectric properties of PbSnSe thin films via quick oxygen ion-implantation sensitization
Wenran Feng,Zhen Li,Yingying Chen,Jinyang Chen,Haoze Lang,Jianghong Wan,Yan Gao,Haitao Dong
DOI: https://doi.org/10.1007/s10853-021-06722-3
IF: 4.5
2022-01-01
Journal of Materials Science
Abstract:Although chalcogenide materials continue to generate considerable interest due to great potentials for various optoelectronic devices, annealing for a long time in oxygen or halide atmospheres is necessary to endow them photo-sensitivity. This paper proposes a universal approach to improve optoelectrical properties for thin film photoresistors (TFPs) by quick-oxygen-sensitizing the doped chalcogenide material PbSnSe with ion implantation. Compared with the as-deposited film, the implanted film exhibits much more uniform image, higher optical absorption, broader optical band gap and better photoelectronic properties. In sensitized PbSnSe TFPs, the PbSnO3 phase formed, which can trap minority carriers, enabling enhanced photoconduction. We also demonstrate the performance of sensitized PbSnSe TFPs with ultraquick and stable photo-response for IR irradiation. The photosensitivity of the sensitized PbSnSe TFPs was about 4.1%, which is about 41.5% higher than that of its as-deposited counterpart. Moreover, the photosensitivity attenuation was restricted by sensitization. The results indicate promising potentials for sensitized chalcogenide platforms, and the developed strategy can be applied for high-performance chalcogenide optoelectronics.Graphical abstract
materials science, multidisciplinary