Analysis of the Inductive Turn-off of Double Gate MOS Controlled Thyristors

AQ Huang

DOI: https://doi.org/10.1109/16.502140

IF: 3.1

1996-01-01

IEEE Transactions on Electron Devices

Abstract:High voltage inductive turn-off of double gate MOS Controlled Thyristors (MCT's) are analyzed using two-dimensional numerical simulations. Analysis show that beside the significantly improved maximum controllable current and reduced switching loss, the electric field distribution in these devices have two peaks during inductive turn-off, enabling the maximum turn-off power density to be twice as high as that of the single gate devices. This observation also applies to other double gate bipolar power devices such as double gate Insulated Gate Bipolar Transistors (IGBT's).