Abstract:The Pb/Si(111) thin films were simulated within the density functional theory (DFT). The well-known Perdew-Burke-Ernzerhof (PBE) version of the generalized gradient approximation (GGA) and its recent nonempirical successor Wu-Cohen (WC) issue were used to estimate the exchange-correlation functional. Lattice parameters were calculated for Bulk of the Pb and Si compounds to obtain more reliable lattice mismatch at the interface to be consistent with our used full-potential method of calculations. The WC-GGA result predicts the lattice constants of the Pb and Si compounds better than the GGA when compared with experiment. We have found that the spin-orbit coupling (SOC) does not significantly influence the results. Our finding is in agreement with the recent observation of the Rashba-type spin-orbit splitting of quantum well states in ultrathin Pb/Si(111) films. Our result shows, in agreement with experiment, that the top site (T1) is the most stable phase. A combination of tight $\sigma$ and feeble $\pi$ bonds has been found at the interface, which results in a covalent Pb-Si bond. Our calculated electric field gradient (EFG) predicts quantum size effects (QSE) with respect to the number of deposited Pb layers on the Si substrate. The QSE prediction shows that the EFG dramatically drops on going from first to second layer. The EFG calculation shows that this system is not an ideal paradigm to freestanding films.

Effect of Substrate Doping Concentration on Quantum Well States of Pb Island Grown on Si(111)

Interface Effects on the Quantum Well States of Pb Thin Films

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Influence of the substrate lattice structure on the formation of Quantum Well States in thin In and Pb films on silicon

Modifying Quantum Well States of Pb Thin Films Via Interface Engineering

Kondo Effect of Single Co Atoms Adsorbed on Pb/Si(111) Nanoislands

Superconductivity of individual Pb islands on Si(111): Pseudogap, critical region, density of states, and island size

Influence of Quantum Size Effects on Pb Island Growth and Diffusion Barrier Oscillations

Quantum Oscillations in Pb/Si (111) Heterostructure System

Surface Morphologies of Pb Thin Films on Si(111)

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

The role of Pb wetting layer conduction in tunneling spectroscopy of Pb nanoislands on Si(111) surface

Controllable Modulation to Quantum Well States on Β-Sn Islands

The Influence of Substrate Doping on Silicide Formation with Tungsten Deposited from Tungsten Hexafluoride

STM Study of Pb Nanoislands by Molecular Beam Epitaxy Growth on the Two-Dimensional Ferroelectric α-In2Se3

Degeneracy pressure of electrons: a new effect for Pb islands grown on Si(111) substrate

The Effects of B and P Impurities on the Electronic and Optical Properties of Si1 − X Ge X Nanowires

Quantum Size Effects in Pb/Si(111) Thin Films from Density Functional Calculations

The Effect of Silicon Doping in the Barrier on the Electroluminescence of Ingan/Gan Multiple Quantum Well Light Emitting Diodes

Effect of Phosphorus Doping on the Structural Properties in Nc-Si:H Thin Films

Doping Effects Of Sb And Pb In Epitaxial Topological Insulator Bi2se3 Thin Films: An In Situ Angle-Resolved Photoemission Spectroscopy Study