Abstract:Cu substitution for Pb (CuPb) has been theoretically predicted to introduce resonant states near the valence band edge of PbSe. However, experimentally, it has not been verified yet due to the extremely low solubility (∼0.3 atom %) of CuPb. In this study, we demonstrate that the solubility limit of CuPb is extended to at least 1.5 atom % in PbSe by pairing with an identical amount of Cu interstitials (Cui), while excess Cu precipitates out as a Cu2Se phase at grain boundaries. As a result of the increased dopability of CuPb, a significant enhancement of the Seebeck coefficient is realized in hole-doped PbSe because of CuPb-induced resonant states. This is also testified by first-principles calculations. Moreover, the rich point defects (CuPb, Cui), line defects (dislocations), and Cu2Se precipitates remarkably frustrate the phonon propagation of PbSe, leading to ∼45% reduction of lattice thermal conductivity (κ lat) at room temperature. At elevated temperatures (>623 K), there is a dynamic migration of Cu atoms from Cu2Se precipitates to tetrahedral interstices of the PbSe matrix as evidenced by the temperature-variant Hall study and thermal expansion coefficient measurement. This diffusion-like process of Cu further drops the κ lat to ∼0.27 W m–1 K–1 at 823 K. Consequently, a peak ZT of ∼1.8 at 873 K is achieved in the (Cui)0.01Pb0.97(CuPb)0.01Na0.02Se sample. This work highlights the potential of the defect structure design in innovating new functional materials, particularly high-performance thermoelectrics.

Defects Energetics, Electronic Structure and Optical Properties of Cu-Doping and Zn Vacancy Impurities in ZnSe

Unveiling the Atomic Defects and Electronic Structure of Cu2.2Zn0.8SnSe4-xTex (x = 0 to 0.04) by X-ray Absorption Fine Structure Spectroscopy.

Effect of Cu doping on the electronic structure, magnetic and optical properties of GaN/ZnS heterojunctions: a first-principles study

First-principles study on electronic and optical properties of Zn-substituted CuGaSe2

Theoretical Study of Defects in Cu$_3$SbSe$_4$: Search for Optimum Dopants for Enhancing Thermoelectric Properties

Study of Point Defect on the Stability and Magneto-Optical Properties of ZnO:Cu by First-Principles

Numerical Study of the Electronic Structure, Elastic and Optical Properties of Defect Quaternary Semiconductor CuGaSnSe4

Defect Chemistry of Halogen Dopants in ZnSe

Mapping the Energetics of Defect States in Cu2ZnSnS4 films and the Impact of Sb Doping

Numerical Study of the Defect Adamantine Compound CuGaGeSe4

Synthesis and Semiconducting Behavior of Zr (cu, Fe) Se2− Single Crystals

Effect of Anti-Site Point Defects on the Mechanical and Thermodynamic Properties of MgZn2, MgCu2 Laves Phases: A First-Principle Study

Defect energy levels and persistent luminescence in Cu-doped ZnS

Defect-assisted nonradiative recombination in Cu 2 ZnSn Se 4 : A comparative study with Cu 2 ZnSn S 4

Structural Defects And Electronic Properties Of The Cu-Doped Topological Insulator Bi2se3

The Electronic Structures and Optical Properties of Zn2geo4 with Native Defects

Electronic Structures of Defects in Zno: Hybrid Density Functional Studies

Defect-assisted Nonradiative Recombination in Cu2ZnSnSe4 : A Comparative Study with Cu2ZnSnS

Synergetic Optimization of Electrical and Thermal Transport Properties by Cu Vacancies and Nanopores in Cu2Se.

Defect Chemistry Engineering Promotes the Dopability of Cu for an Extraordinary Thermoelectric Performance of Hole-Doped PbSe with Resonant States

Effect of Copper Doping on Electronic Structure and Optical Absorption of Cd33Se33 Quantum Dots