Abstract:With the development of complementary metal-oxide semiconductor (CMOS) technology, the feature size of mental-oxide-semiconductor field-effect-transistor (MOSFET) is continuously shrunk, the short channel effect becomes more and more serious, which makes the static power consumption increase, and now the static power consumption becomes a main source of the power consumption of the integrated circuits. Currently, the performance of CMOS binary logic processor is approaching a bottleneck; therefore the ternary logic becomes a research hotspot to promote the development of high-performance low-power integrated circuits. Compared with binary logic, ternary logic possesses a strong data expression capability, which can not only improve the data density, but also reduce the circuit power consumption and the system complexity. However, using binary devices to build ternary logic circuits requires a large number of components, and even the passive components, which makes it impossible to leverage the advantages of ternary logic. The other method of implementing ternary logic is to utilize innovative two-dimensional materials. This method requires a small number of components and obviates the need for passive components, but it faces the problem that the fabrication process is not mature and cannot be mass-produced. To solve these problems, in this paper by combining the tunneling and the drift diffusion mechanism, we propose a tunneling metal-oxide-semiconductor field-effect transistor (TMOSFET) with three-state characteristics that make it highly suitable for ternary logic design. Compared with other ternary logic schemes, the ternary inverter based on TMOSFET has the same circuit structure as binary inverter, which can simplify the circuit design. In this paper, the operational mechanism of this ternary inverter is studied, and the condition of three-state output of inverter is analyzed. It is found that when the operating voltage VDD and the device turning voltage Vturn satisfy VDD/Vturn approximate to 1.4, the input voltage ranges of the three output states are equivalent. In addition, the influence of TMOSFET transfer characteristic on this ternary inverter is also analyzed. This has certain reference significance for designing and studying ternary logic circuits in future.

Design of Ternary Flip-Flops and Sequential Circuits Based Uponu Hgate

Design of Five-value Gate Circuits and Flip-flops Based on Circuit Quantitative Theory

High-Performance Current-Mode Logic Ternary D Flip-Flop Based on Bipolar Complementary Metal Oxide Semiconductor

Design of ternary pulsed JKL flip-flops

Design of High-Speed Quaternary D Flip-Flop Based on Multiple-valued Current-mode

Design of High-Performance CML Ternary D Flip-Flop Based on BiCMOS

Design of Low Power Multivalued Double-Edge-triggered Flip-Flop

Design of Low-Power Dynamic Ternary CMOS D Flip-Flop

Design of ternary D-type flip-flop based on clock-gating technique

Design of Ternary Adiabatic Counter on Switch-Level

Ternary combinational logic gate design based on tri-valued memristors

Design of D Flip-Flops Based on Multi-Threshold Neuron

A Novel TMOSFET Ternary Inverter Based on Hybrid Conduction Mechanism

Design of new low-power and high-speed quaternary flip-flops based on CNTFETs

New Method for Low Power Sequential Circuit Design Based on Clock Gating

Design of Ternary Clock Generator

Design of Configurable Sequential Circuits in Quantum-dot Cellular Automata

Design an energy efficient pulse triggered ternary flip flops with Pseudo NCFET logic

Multi-state Tunnel Field Effect Transistor Based on Face Tunneling with Gate-Source Overlap

Design and Implementation of Ternary Logic Integrated Circuits by Using Novel Two-Dimensional Materials

Design of a Ternary Logic Processor Using CNTFET Technology