Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

Crossover of the Three-Dimensional Topological Insulator Bi 2 Se 3 to the Two-Dimensional Limit

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Oscillatory Crossover from Two-Dimensional to Three-Dimensional Topological Insulators

Thin Films 3 Se 2 Bi The Coexistence of Superconductivity and Topological Order in the

Dimensional Crossover and Topological Nature of the Thin Films of a Three-Dimensional Topological Insulator by Band Gap Engineering.

Topological insulator in a Bi-Bi$_2$Se$_3$ infinitely adaptive superlattice phase

Crossover from 3d to 2d Quantum Transport in Bi2se3/In2se3 Superlattices

The Coexistence of Superconductivity and Topological Order in the Bi 2 Se 3 Thin Films

Pressure Induced Topological Phase Transition in Layered Bi2S3

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

A computational investigation of topological insulator Bi2Se3 film

Crossover from Ising- to Rashba-type superconductivity in epitaxial Bi 2 Se 3 /monolayer NbSe 2 heterostructures

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching

Topological Phase Transitions in a Hybridized Three-Dimensional Topological Insulator

Tunable Dirac Fermion Dynamics in Topological Insulators

Topological Surface State Evolution in Bi 2 Se 3 via Surface Etching

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Quasiparticle scattering in three-dimensional topological insulators near the thickness limit

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Interplay between topological insulators and superconductors

Electron Interaction-Driven Insulating Ground State In Bi2se3 Topological Insulators In The Two-Dimensional Limit