Influence of H3BO3 or SiO2 Additive on the Microwave Dielectric Properties of CTLA Ceramics

Lin LIU,Youwei FANG,Wendong ZHUANG,Bin TANG,Xiaohua ZHOU,Shuren ZHANG

DOI: https://doi.org/10.3969/j.issn.1004-2474.2012.05.030

2012-01-01

Abstract:The influence of H3BO3 or SiO2 additive(0.02%-2.00%) on the sintering temperatures,crystal structures and microwave dielectric properties of 0.61CaTiO3-0.39LaAlO3 ceramics were investigated.The results showed that the sintering temperature of 0.61CaTiO3-0.39LaAlO3 ceramics could be lowered from 1 380 ℃ to 1 340 ℃ by doping low-level addition of H3BO3 or SiO2 and no phase change was observed when the addition was less than 2.00%.The microstructure of the specimen with 2.00% addition of H3BO3 was changed greatly and the density decreased rapidly because many pores were appeared.The dielectric constant(εr) and the temperature coefficient of resonant frequency(τf) of 0.61CaTiO3-0.39LaAlO3 ceramics were not significantly affected by doping H3BO3 or SiO2,but the quality factors(Q×f) dropped.The excellent microwave dielectric properties were obtained for 0.61CaTiO3-0.39LaAlO3 ceramics with 0.02% addition of H3BO3 or SiO2.The features of the ceramic specimen with H3BO3 addition are that εr is equal to 41.65,Q×f is equal to 48 565 GHz,and τf is equal to-1 μ℃-1 and εr =41.48,Q×f≈39 491 GHz,and τf =-1 μ℃-1 for SiO2 doped ceramic sample.