In Situ Growth Monitoring of Algan/Gan Distributed Bragg Reflectors at 530 Nm Using A 633 Nm Laser

Wen Feng,Huang Lirong,Jiang Bo,Tong Liangzhu,Xu Wei,Liu Deming
DOI: https://doi.org/10.1088/1674-4926/31/9/094010
2010-01-01
Journal of Semiconductors
Abstract:The metal-organic chemical vapor deposition (MOCVD) growth of AlGaN/GaN distributed Bragg reflectors (DBR) with a reflection peak at 530 nm was in situ monitored using 633 nm laser reflectometry. Evolutions of in situ reflected reflectivity for different kinds of AlGaN/GaN DBR were simulated by the classical transfer matrix method. Two DBR samples, which have the same parameters as the simulated structures, were grown by MOCVD. The simulated and experimental results show that it is possible to evaluate the DBR parameters from the envelope shape of the in situ reflectivity spectrum. With the help of the 633 nm laser reflectometry, a DBR light emitting diode (LED) was grown. The room temperature photoluminescence spectra show that the reflection peak of the DBR in the LED is within the design region.
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