Structures and Dielectric Properties of Bi1.5Zn1.0Nb1.5−xTixO7 (x=0, 0.05, and 0.10) Thin Films
Shan-Tao Zhang,Yi-Zhang,Ming-Hui Lu,Yan-Feng Chen,Zhi-Guo Liu
DOI: https://doi.org/10.1063/1.2433762
IF: 4
2007-01-01
Applied Physics Letters
Abstract:B -site Ti-substituted Bi1.5Zn1.0Nb1.5O7 (Bi1.5Zn1.0Nb1.5−xTixO7, x=0, 0.05, and 0.10) thin films have been fabricated on Pt∕Ti∕SiO2∕Si substrates by pulsed laser deposition. The x-ray diffraction and scanning electron microscopy measurements show that the films have a single phase and are well crystallized and homogeneous. Dielectric properties are investigated as function of temperature and frequency. It is found that the Ti substitution increases the dielectric constant. At 10kHz, the room temperature dielectric constant and loss tangent (ε, tanδ) are (163, 0.006), (182, 0.014), (197, 0.010) for the films with x=0, 0.05, and 0.10, respectively. In a wide temperature and frequency range (−100°C∼50°C, 1kHz∼1MHz), the dielectric constant is almost constant. However, below −100°C, a dielectric relaxation depending on Ti content is observed. The relationship between structure and property of this thin film system is discussed.