Abstract:Understanding and controlling the impurity behavior are important for low-cost and high-efficiency of multi-crystalline silicon solar cells.We employ the infrared spectroscopy to study the change of oxygen and carbon concentrations after thermal treatment in different parts of multi-crystalline silicon ingots grown by directional solidification technology.In correlation with the solar cell performances such as theminority carrier lifetime,photoelectric conversion efficiency and internal quantum efficiency,we investigate the physical mechanism of the effects of various concentrations of oxygen and carbon on cell performance.We propose an oxygen precipitation growth model considering the influence of carbon to simulate the size distribution and concentration of oxygen precipitation after the thermal treatment.It is found that carbon not only deteriorates the efficiency of the cells made from the silicon from the top part of the ingot,but also plays an important role in the effect of oxygen precipitation：enhancing the size and the quantity of oxygen precipitation in the silicon from the middle part of the ingot,which induces the defect and increases the recombination;while resulting in the small size and low quantity of oxygen precipitation in the silicon from the bottom part due to the low carbon content,thereby improving the cell efficiency through gettering impurities.We further demonstrate the complex behaviors of oxygen and carbon by a two-step thermal treatment technique,from which we point out that the two-step thermal treatment is applicable only to the improvement of the efficiency of solar cells from the bottom part of multi-crystalline silicon ingots.

Crystal Growth of High-Purity Multicrystalline Silicon Using A Unidirectional Solidification Furnace for Solar Cells

Oxygen and Nitrogen Transfer in Furnaces in Crystal Growth of Silicon by Czochralski and Directional Solidification Processes

Global Simulation of Coupled Oxygen and Carbon Transport in an Industrial Directional Solidification Furnace for Crystalline Silicon Ingots: Effect of Crucible Cover Coating

Simulation analysis on furnace pressure for reducing the impurities concentrations distribution during the growth of mc-Si ingot by DS process: Solar cell applications

Influence of Crystal Growth Rate on the Thermal Field in a Directional Solidification Process for Silicon Solar Cells

Oxygen and Carbon Behaviors in Multi-Crystalline Silicon and Their Effect on Solar Cell Conversion Efficiency

Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon

Numerical analysis of thermohydraulic behavior in a directional solidification furnace

Generation of Carbon and Oxygen in CZ Elemental Crystal Furnace and the Influence of Monocrystalline Silicon Growth

Control of the Gas Flow in an Industrial Directional Solidification Furnace for Production of High Purity Multicrystalline Silicon Ingots

Effect of Silicon Nitride Coated Carbon Crucible on Multi-Crystalline Silicon Ingot during Directional Solidification Process: Numerical Simulation

Effects of Argon Flow on Impurities Transport in a Directional Solidification Furnace for Silicon Solar Cells

Effect of Heat Transfer During the Vacuum Directional Solidification Process on the Crystal Quality of Multicrystalline Silicon

Preparation of High Purity Crystalline Silicon by Electro-Catalytic Reduction of Sodium Hexafluorosilicate with Sodium below 180°C

Analysis of SiC Crystal Sublimation Growth by Fully Coupled Compressible Multi-Phase Flow Simulation

Computer modeling of crystal growth of silicon for solar cells

Application of Multi Heaters in a Directional Solidification Furnace for Silicon Solar Cells

(Invited) Defects in Cast-Mono Crystalline Silicon

Oxygen Annealing Behavior in Multicrystalline Silicon

Numerical Investigation of Argon Gas Flow Patterns and Their Effects on Mc-Si Ingot Growth Process: Solar Cell Applications

System design and hot zone optimization of monocrystalline silicon directional solidification furnace for PV application