Abstract:The fabrication of self-shunted SNS (superconductor/normalconductor/superconductor) Josephson junctions for rapid single flux quantum (RSFQ) logic could potentially facilitate increased circuit density, as well as reduced parasitic capacitance and inductance over the currently used externally shunted SIS (superconductor/insulator/superconductor) trilayer junction process. We report the deposition, fabrication, and device characterization of Josephson junctions prepared with Nb1-yTiyN electrodes and TaxN barriers tuned near the metal - insulator transition, deposited on practical large-area oxide-buffered silicon wafers. When scaled to practical device dimensions, this type of junction is found to have an IcRn product of over 0.5 mV and a critical current (I-c) and normal resistance (R-n) of magnitudes suitable for single flux quantum digital circuits. A longer than expected normal-metal coherence length (xi(n)) of 5.8 nm is inferred from the thickness dependence of J(c) at 4.2 K for junctions fabricated using a barrier resistivity of 13 m Omega cm. Although not well understood and not quantitatively predicted by conventional theories, this results in a sufficiently high I-c and IcRn to make the junctions suitable for practical applications. Similar observations of unexpectedly large Josephson coupling currents in SNS junctions have been documented in other systems, particularly in cases when the barrier is near the M - I transition, and have become known as the giant proximity effect. The temperature dependence of xi(n), I-c R-n, and J(c) are also reported. For this technology to be used in practical applications, significant improvements in our fabrication process are needed as we observe large variations in I-c and R-n values across a 100 mm wafer, presumably as a result of variations in the Ta: N stoichiometry and the resulting changes in the TaxN barrier resistivity.

Josephson phase qubit circuit for the evaluation of advanced tunnel barrier materials

Character and Fabrication of Al/Al2O3/Al Tunnel Junctions for Qubit Application.

Aluminum Josephson junction microstructure and electrical properties modification with thermal annealing

Influence of the stoichiometric ratio of barrier layer alumina on the transport properties of Josephson junctions

The influence of pinholes and weak-points in aluminium-oxide Josephson junctions

Improving wafer-scale Josephson junction resistance variation in superconducting quantum coherent circuits

Quasiparticle tunneling as a probe of Josephson junction barrier and capacitor material in superconducting qubits

Tunneling Qubit Operation on a Protected Josephson Junction Array

Macroscopic Quantum Tunneling and Qubit Design Parameters of Bi2Sr2CaCu2O8+δsurface Intrinsic Josephson Junctions

Gate-controlled near-surface Josephson junctions

Nano Josephson Superconducting Tunnel Junctions in Y-Ba-Cu-O Direct- Patterned with a Focused Helium Ion Beam

SUPERCONDUCTING JOSEPHSON TUNNEL JUNCTION FABRICATION PROCESS AND PERFORMANCE IMPROVEMENT

Gate- and flux-tunable sin(2$φ$) Josephson element with proximitized Ge-based junctions

Controlling the thickness of Josephson tunnel barriers with atomic layer deposition

Resonant escape in Josephson tunnel junctions under millimeter-wave irradiation

Phase dynamics of tunnel Al-based ferromagnetic Josephson junctions

Internally shunted Josephson junctions with barriers tuned near the metal–insulator transition for RSFQ logic applications

Probing defect densities at the edges and inside Josephson junctions of superconducting qubits

Mitigation of critical current fluctuation of Josephson junctions in superconducting quantum circuits

Self-aligning fabrication and DC characterization of Nb/AlOx/Nb superconducting Josephson junctions

Computational Simulations of Fabrication of Aluminum-Based Josephson Junctions: Topological Aspects of the Barrier Structure