Semiconductor and Gas-Sensing Property of TiO2 Thin Films

WANG Bao-guo,SUN Qian,ZHANG Jin-li,LI Wei
DOI: https://doi.org/10.3969/j.issn.0493-2137.2007.08.001
2007-01-01
Abstract:TiO2 films were prepared with the dopant of polyethylene glycol(PEG) and Al3+ through the Sol-Gel method,then the semiconductor and gas-sensing property of the synthesized TiO2 films were investigated.It was indicated that the addition of PEG made the luminescence spectra peaks of TiO2 films blue-shift from 650 nm to 600 nm.Resistance of the 2.0 g/100 mL PEG2 000-doped TiO2 films increased under the reducing atmosphere,and the films had a maximum gas sensitivity of 3.4 to 1.0×10-3(volume fraction)CO at 350 ℃.Consequent addition of Al3+ to the TiO2 films enhanced the gas sensitivity further.For the TiO2 films with the dopant of 2.0 g/100 mL PEG2 000 and 50/0 or 100/0 Al3+,the maximum gas sensitivity to 1.0×10-3(volume fraction)CO was 5.0 and 20.4,respectively.X-ray photoelectron spectroscopy characterization indicated that both the crystal lattice displacement of Al3+ and the excess oxygen atom resulted in the cavity conducting mechanism of the TiO2 films with the dopant of PEG and Al3+,which is the typical property of P-type semiconductors.These results were important to develop TiO2-based gas sensors and solar cells.
What problem does this paper attempt to address?