Dynamic Process of Self-Started Self-Mode-locked Ti:sapphire Laser with a Semiconductor Saturable Absorber Mirror

CY Wang,Y Wang,L Chai,WL Zhang,QR Xing,ZG Zhang
DOI: https://doi.org/10.1016/s0030-3992(00)00122-5
2001-01-01
Abstract:Dynamic process of self-started self-mode-locked Ti:sapphire laser with a semiconductor saturable absorber mirror (SESAM) was investigated and two mode-locking starting processes were found in which one is fast and the other is slow. In the fast starting process, a mode-locking build-up time of about 400μs was needed during which pure passive mode-locking process was caused by the SESAM and Kerr-lens mode-locking process arose from the nonlinearity of the Ti:sapphire gain medium. In the slow starting process, a build-up time of about several minutes was found in which temperature effect of the SESAM dominates the dynamic process.
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