Magnetization Profile at the Fe/GaAs(0 0 1)-4×6 Interface

L Giovanelli,CS Tian,PL Gastelois,G Panaccione,M Fabrizioli,M Hochstrasser,M Galaktionov,CH Back,G Rossi
DOI: https://doi.org/10.1016/j.physb.2003.11.048
2004-01-01
Abstract:The magnetization of a thin Fe film epitaxially grown on GaAs(001)-4×6 was studied at different depths from the metal/semiconductor interface using a single layer of Fe0.5Co0.5 as a marker layer through a double-wedge Fe film. By measuring the X-ray magnetic circular dichroism spectroscopy at the L2,3 of Co, the magnetic response of the film could be sensed at different distances from the interface. Data show a reduction of the magnetization at the interface though the existence of a magnetically “dead” layer is completely ruled out. Moreover, the magnetization was found to be reduced at the Fe film surface.
What problem does this paper attempt to address?