Abstract:A novel method is described for preparing high-quality VO2 thin films which exhibit an abrupt resistivity change of 4-5 orders of magnitude at about 60 degrees C; this is the best result among those so far prepared on non-crystal substrates. To show the difference from the ordinary sol-gel method which uses vanadium alkoxide as precursor, this method has been called (by the authors) the inorganic sol-gel method, for it uses V2O5 powder as precursor. This newly developed method shows some advantages in that it produces high-quality VO2 thin films (adherent, crack-free, and with good switching properties) in a cheap, simple, and reproducible way. The method consists of four processes: quenching, coating, drying and vacuum heat treatment. These processes show strong effects on the properties of the final films. In this paper, the effects of the drying process on the film blistering and the effects of film thickness, quenching temperature, and heat treatment time on the resistivity switching property were studied, and DSC, XRD, ESCA, and SEM were utilized to study the drying process and characterize the films. It was found that when the drying temperature was > 300 degrees C and heating rate was < 0.5 degrees C min(-1) in the drying process, the final films would be blister-free and crack-free (on non-crystal substrates). It was also found that the magnitude of resistivity change at the phase transition of the samples treated at 500 degrees C for 10 h under a pressure of 0.8 Pa increased with increasing thickness (in the thickness range 0.4 to 8 mu m). When the film thickness was about 1 mu m, the magnitude of resistivity change of the samples treated under the same conditions was found to decrease with increasing quenching temperature. In a certain range of treatment time the magnitude of resistivity change of the samples treated at 500 degrees C under a pressure of 0.8 Pa was found to increase with increasing heat treatment time.

Optical Switch Based on Vanadium Dioxide Thin Films

Fabrication of VO2 Films with Low Transition Temperature for Optical Switching Applications

High quality vanadium dioxide thin film prepared on non-crystal substrate

Numerical Investigations of an Optical Switch Based on a Silicon Stripe Waveguide Embedded with Vanadium Dioxide Layers

VO2 Film with Small Hysteresis Width and Low Transition Temperature

Vanadium dioxide films with good electrical switching property

Optical switching properties of VO2 films driven by using WDM-aligned lasers

Electrical Controlled broadband Terahertz switch based on Vanadium Dioxide film

Current-modulated Optical Properties of Vanadium Dioxide Thin Films in the Phase Transition Region

Sub-picosecond all-optical switching in a hybrid VO2:silicon waveguide at 1550 nm

Low-voltage broadband hybrid plasmonic-vanadium dioxide switches

Electrically Tunable High-Contrast Optical Modulator Based on the Phase Transition of Vanadium Dioxide

Ultrafast and Broadband Terahertz Switching Based on Photo-Induced Phase Transition in Vanadium Dioxide Films

rf-microwave switches based on reversible semiconductor-metal transition of VO2 thin films synthesized by pulsed-laser deposition

Vanadium Dioxide: Metal-Insulator Transition, Electrical Switching and Oscillations. A Review of State of the Art and Recent Progress

On the Optical Properties of Thin‐Film Vanadium Dioxide from the Visible to the Far Infrared

Electro-Optic Polymer Assisted Optical Switch Based on Silicon Slot Structure

Bilayer Vanadium Dioxide Thin Film with Elevated Transition Temperatures and High Resistance Switching

Highly Transparent VO2-SiO2 Films with Excellent Infrared Characteristics by Dual-Target Magnetron Sputtering

Mach-Zehnder Based Optical Switches in Silicon-On-Insulator

Vanadium Dioxide Thin Films Synthesized Using Low Thermal Budget Atmospheric Oxidation