Abstract:Single-particle irradiation is a typical condition in space applications, which could be detrimental for electronic devices through processes such as single-event upset or latch-up. For functional devices made of few-atom-thick monolayers that are entirely exposed to the environment, the irradiation effects could be manifested through localized or delocalized electronic excitation, in addition to lattice defect creation. In this work, we explore the single-H irradiation effects on bare or coated graphene monolayers. Real-time time-dependent density functional theory-based first-principles calculation results elucidate the evolution of charge densities in the composite system, showing notable charge excitation but negligible charge deposition. A hexagonal boron nitride coating layer does not protect graphene from these processes. Principal component analysis demonstrates the dominance of localized excitation accompanied by nuclear motion, bond distortion and vibration, as well as a minor contribution from delocalized plasmonic excitation. The significance of coupled electron-ion dynamics in modulating the irradiation processes is identified from comparative studies on the spatial and temporal patterns of excitation for unconstrained and constrained lattices. The stopping power or energy deposition is also calculated, quantifying the dissipative nature of charge density excitation. This study offers fundamental understandings of the single-particle irradiation effects on optoelectronic devices constructed from low-dimensional materials, and inspires unconventional techniques to excite the electrons and ions in a controllable way.

The effect of layer number and substrate on the stability of graphene under MeV proton beam irradiation

Effect of electron-beam irradiation on graphene field effect devices

Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS 2 -Interlayer-mos 2 Tunneling Junctions

Environment-Dependent Radiation Tolerance of Graphene Transistors under Proton Irradiation

Electronic excitation in graphene under single-particle irradiation

Substrate surface effects on electron-irradiated graphene

Layer thickness influenced irradiation effects of proton beam on MoS 2 field effect transistors

Effects of High-Energy Electron Beam Irradiation on The Structure, Composition and Morphological Properties of Graphene Nanoplatelet Films

Transient Current in Graphene Transistors Under Single- Proton Irradiation

Effects of Defects and Thermal Treatment on the Properties of Graphene

Monitoring Electron-Beam Irradiation Effects on Graphenes by Temporal Auger Electron Spectroscopy

Outstanding Radiation Tolerance of Supported Graphene: Towards 2D Sensors for the Space Millimeter Radioastronomy

First-principles Study on the Microstructure, Band Structure, Mechanical and Optical Properties of AB-stacked Bilayer Graphene under Constant Neutron Irradiation with Different Electric Field Magnitudes and Directions.

Modifying Electronic Transport Properties of Graphene by Electron Beam Irradiation

Self‐Passivation of Defects: Effects of High‐Energy Particle Irradiation on the Elastic Modulus of Multilayer Graphene

Effect of SiO2 substrate on the irradiation-assisted manipulation of supported graphene: a molecular dynamics study.

2 Mon 14 : 15 HSZ 304 Resonant Scattering by Realistic Impurities in Graphene — ∙

First-principles Study on the Effects of Fast Neutron Irradiation and Fast Neutron Irradiation under the External Electric Field on Carbon-Based Material AB Bilayer Graphene

Detecting swift heavy ion irradiation effects with graphene

Study of High-Energy Proton Irradiation Effects in Top-Gate Graphene Field-Effect Transistors

Modification of Graphene Supported on Sio2 Substrate with Swift Heavy Ions from Atomistic Simulation Point