Interfacial microstructure and sintering mechanism of plasma activated sintered Al/SiC composites
Jianian Hu,Youling Zhu,Haotian Zhang,Peibo Li,Jian Zhang,Guoqiang Luo,Qiang Shen
DOI: https://doi.org/10.1016/j.vacuum.2023.112051
IF: 4
2023-04-07
Vacuum
Abstract:Al/SiC composites are excellent candidates to be applied in many area, however, the generation of Al 4 C 3 in Al/SiC composites result in their mechanical properties below expectation. In present work, Al matrix reinforced by SiC composites fabricated by plasma activated sintering (PAS) are investigated. Al/SiC composites synthesized in such a way can be well consolidated under 530 °C with a relative density higher than 99%. The interfacial microstructures of Al/SiC composites prepared under different temperatures are observed to analyze the sintering mechanisms. The results indicate that the oxide impurity on Al and SiC surface is firstly removed by the plasma activation. Due to the interfacial current effect and Peltier effect, local hotspots on the interface of SiC and Al cause the reaction of Al and SiC to form an Al–Si diffusion layer and Si 1-x C. Finally, the Al elements react with Si 1-x C to form Al 4 C 3 . In addition, owing to PAS rapid sintering effect, high tensile strength 256 MPa is reached by different strengthening mechanisms.
materials science, multidisciplinary,physics, applied