Abstract:The driving mechanism of the metal-insulator transition (MIT) in VO2 has always attracted attention, in particular with regards to understanding if and how the doping mechanism may tune the MIT transition temperature. However, due to the lack of detailed local structural information, in this oxide the underlying MIT mechanism is still matter of debate. In this contribution on the V1-xWxO2 system, we attempt to clarify the origin of the MIT induced by tungsten doping. Combining W L-3-edge and V K-edge extended X-ray absorption fine-structure (EXAFS) spectroscopy, the local structures around both V and W have been obtained. The data point out the occurrence of internal stress along the V-V chains induced by doping. It reaches a critical value that remains constant during the transition. The main effect of the internal stress on the vanadium local structure has also been identified. Actually, upon increasing the dopant concentration, the tilt of the V-V pairs towards the apex oxygen atoms in the VO6 octahedron decreases while the V-V bond lengths remain unchanged. The electronic structure has also been investigated by O K-edge X-ray absorption near-edge structure (XANES) spectroscopy. Actually, at high doping concentrations the interaction of O-2p and the V d(parallel to) state increases, while the hybridization of O-2p and V pi* decreases. The O-2p-V-3d hybridization is therefore an essential parameter correlated with the decreasing transition temperature in the V1-xWxO2 system.

First-principle study on the chromium doping effect on the crystal structure of metallic VO2

Atomic Scale Observation of A Defect-Mediated First-Order Phase Transition in Vo2(A)

Predicted Rebound Effects of Insulator-Metal Transition Temperature in Tungsten Doped VO2 Via First-Principles Method

First-principles calculation of structural, electronic, optical, and mechanical properties of SrVO3

First-principles Investigation of 3d Transition Elements in L10 TiAl

Decoupling the Lattice Distortion and Charge Doping Effects on the Phase Transition Behavior of VO2 by Titanium (ti(4+)) Doping.

First-Principles Study On The Mechanical Properties And Electronic Structure Of V Doped Wcob And W2cob2 Ternary Borides

Effects of Cr Doping on the Structural and Electrochemical Properties of V2o5

Terahertz Transmittance and Metal-Insulator Phase Transition Properties of M2 Phase VO2 Films Induced by Cr Doping

First-Principles Investigation Of 3d Transition Elements In L1(0) Tial

Symmetry-Controlled Structural Phase Transition Temperature in Chromium-Doped Vanadium Dioxide

Effect of Nonmagnetic Impurity Doped on the Structural and Magnetic Properties of Quasi-One-dimensional Antiferromagnet LiCuVO 4

Unraveling Metal-insulator Transition Mechanism of VO 2 Triggered by Tungsten Doping

Density Functional Theory Study of Doping Effects in Monoclinic Clinobisvanite BiVO4

First Principle Study of Ferromagnetism in Cr-doped In2O3

Theoretical study of the new compound VO2 (D)

First principle study of the effect of doping on the optoelectronic properties of Cr-adsorbed MoS2

Incorporating static intersite correlation effects in vanadium dioxide through DFT$+V$

First-Principles Investigation of the Effect of Vanadium Doping on Hydrogen Incorporation in Tungsten

Theoretical Study On The Tungsten-Induced Reduction Of Transition Temperature And The Degradation Of Optical Properties For Vo2

Metal-insulator transition in V 1-xW xO 2: Structural and electronic origin