Abstract:The transparent conductive CuCr1-xNixO2 (0 <= x <= 8%) films were prepared by sol-gel method with two-step annealing process. The structure, morphology, phonon modes, chemical composition, optical bandgap, and electrical properties were systematically studied. It was found that the crystal quality improves first and then decreases with increasing the Ni content, and the inflection point occurs when the doping content is 2% and all samples have the (00l) preferred orientation. In the visible region, the transmittances of these samples range from 75% to 55% as the Ni dopant increases. On the basis of the theoretical calculation, we are inclined to the view that there are two ways of coexisting electronic transitions. The direct band gap decreases from 3.13 to 3.02 eV, and the indirect band gap decreases from 2.78 to 2.49 eV with increasing Ni content. Transmittance spectra of the CuCrO2 film at the temperatures from 323 to 453 K present the fact that the absorption edge shows a slight redshift, which is due to the lattice thermal expansion and the electron-phonon interaction. Raman spectroscopy shows that Ni doping can substitute the Cr sites and further affect Cu-O bonds, which is caused by oxygen deficiency or a relatively smaller crystallite size. Moreover, it suggested that the nonlinear temperature dependence of phonon frequency and line width is a sign of nonharmonic lattice dynamics. The inherent anharmonic force from the crystal results in energy exchange between harmonic phonon normal modes, thereby promoting thermal balance, and in the lattice. The Cu cations have been confirmed to exist in the valence state of Cu1+, and all doped Ni cations exist in a positive divalent state by XPS. Hall effect measurement shows that the conductivities and carrier concentrations of the doped CuCr1-xNixO2 films can be improved by several orders of magnitude larger than that of undoped CuCrO2. The present work suggests that these well crystallized films without a secondary phase can be applied in future p-type optoelectronic devices.

X-ray Spectroscopic Study of the Electronic Structure of CuCrO2

The Electronic Structure of SrCu2O2 Studied by Synchrotron Radiation Excited Photoemission and Hybrid Exchange Density Functional Calculations

Band structure calculations of CuAlO2, CuGaO2, CuInO2 and CuCrO2 by screened exchange

Review in optoelectronic properties of p-type CuCrO2 transparent conductive films

On the strong impact of doping in the triangular antiferromagnet CuCrO2

Electronic transitions of the transparent delafossite-type CuGa1−xCrxO2 system: first-principles calculations and temperature-dependent spectral experiments

Ab Initio Electronic Structure of CrO 2

Composition Dependence of the Structure and Optical Properties of CuCrO 2 Powders

Ab Initio Electronic Structure Of Cro2

Electronic Structure and X-Ray Absorption Near Edge Spectroscopy of Copper Oxides

Structural, electronic band transition and optoelectronic properties of delafossite CuGa 1-xCr xO 2 (0 ≤ x ≤ 1) solid solution films grown by the sol-gel method

Orbital character of O 2p unoccupied states near the Fermi level in CrO2

Electronic Correlations in Multiferroic van der Waals CuCrP$_2$S6: Insights From X-Ray Spectroscopy and DFT

Structural, Electronic Band Transition and Optoelectronic Properties of P-Type Transparent Conductive CuCr1–xNixO2 Semiconductor Films

On-Site Interband Excitations in Resonant Inelastic X-Ray Scattering from Cu2o

Theoretical Study on the Atomic Structure, Electronic States, and STM Image of C(2×2) Cu(001)/O Surface

Studies Of The Cu-O Bond In (Pb,Cd)-1212 And (Pb,Cd)-1201 Cuprates By X-Ray Photoelectron Spectroscopy

Theoretical study of low-lying electronic states of CuO and CuO−

Photoelectrochemical Properties of CuCrO2: Characterization of Light Absorption and Photocatalytic H2 Production Performance

Electronic inhomogeneity and band structure on superstructural CuO2 planes of infinite-layer Sr0.94La0.06CuO2+y films

Electronic Transition And Electrical Transport Properties Of Delafossite Cucr1-Xmgxo2 (0 <= X <= 12%) Films Prepared By The Sol-Gel Method: A Composition Dependence Study