Abstract:Colossal permittivity ceramic materials (CP, >10 3 ) have the potential of miniaturization and convenience for electric components. Unfortunately, they are often accompanied by high dielectric loss (>0.5), which limits their application. In this work, Ti 1- x (Tm 0.5 Nb 0.5 ) x O 2 (TTNO x ) ceramics are prepared via the solid state method. The results show that the main phase of doped samples maintains the rutile TiO 2 phase and the average grain size decreases with increasing additive amounts. Gradually, the Tm 2 Ti 2 O 7 phase appears and subsequently it is converted to the TmNbTiO 6 phase. Furthermore, the low dielectric loss and colossal permittivity are synchronously achieved in doped ceramic samples by defect regulation. Especially, high permittivity of ∼1.61 × 10 5 , low dielectric loss of ∼0.078 (1 kHz) and the AC resistivity of ∼10 −9 s/cm are achieved in x = 0.01 samples at room temperature with good frequency and temperature stability. The true origin is deeply discussed by some analyses of XRD, XPS, SEM, Raman spectra and the complex impedance. The results show that enhanced dielectric performance originates from this fact that the addition of Nb and Tm ions triggers defective dipoles formation in grains, such as TiTi′/TmTi′−VO..−TiTi′/TmTi′ , TiTi′/TmTi′−NbTi∙ , pinning the electron and limiting its long-range transition. Furthermore, the grain boundary resistivity is crucial to the ceramic conductivity. This study has driving implications for the application of colossal permittivity ceramic materials.

Percolation Phenomena in Niobium-doped TiC1−x

First-principles Study of Nitrogen Doping and Oxygen Vacancy in Cubic PbTiO3

A Paradigm of Topological-Microstructure-transition Induced Magnetic Critical Behaviors in Percolative Nanocomposites

Study on the Semiconducting Grain and Insulating Barrier Layer in Aluminum/Niobium Co-doped CCTO

First-Principles Study of the Influences of Oxygen Defects Upon the Electronic Properties of Nb-Doped Tio2 by Gga + U Methods

Effect of Nb Doping Concentration on Transparent Conductivity of TiO2 Films Fabricated by Sol-Gel Method

A universal approach of modelling the dielectric behaviors of percolative composite ceramics and thin films

Investigation on the Electrical Properties of Anatase and Rutile Nb-Doped Tio2 by Gga(+U)

The transport properties of Nb-doped trichalcogenide Ta0.8Nb0.2S3

PERCOLATION MODEL OF Ti-Al2O3 CERMET

Percolation phenomena in the stabilized cubic zirconia solid solution

Crucial Role of Percolation Transition on the Formation and Electromagnetic Properties of Batio3/Ni0.5zn0.47fe2o4 Ceramic Composites

Effect of Doped Niobium on the Microstructure and Properties of W–Nb/TiC Composites Prepared by Spark Plasma Sintering

Nonmetallic power-law behavior of conductance in Ni-doped NbSe3 nanowires

Regulation of structural and terahertz properties of TiC nanoparticles by carbon-coating and N-doping

Manipulating the Carrier Concentration and Phase Transition Via Nb Content in SrTiO3

Consequences of niobium doping for the ferromagnetism and microstructure of anatase Co: TiO2 films

Enhanced dielectric performance of Niobium and Thulium modified rutile TiO 2 ceramics by defect regulation

S-wave Superconductivity in Optimally Doped SrTi_1-xNb_xO_3 Unveiled by Electron Irradiation

The Role of Niobium in (ca, Si, Ce, Nb)-Doped TiO2 Varistors

New insights into the formation mechanism of the multicomponent carbides (Nb, M)C (M = Ti, Cr and Mn)