Abstract:We investigate the structural and physical properties of the AgSnmSbSem+2 system with m = 1–20 (i.e., SnSe matrix and ∼5–50% AgSbSe2) from atomic, nano, and macro length scales. We find the 50:50 composition, with m = 1 (i.e., AgSnSbSe3), forms a stable cation-disordered cubic rock-salt p-type semiconductor with a special multi-peak electronic valence band structure. AgSnSbSe3 has an intrinsically low lattice thermal conductivity of ∼0.47 W m–1 K–1 at 673 K owing to the synergy of cation disorder, phonon anharmonicity, low phonon velocity, and low-frequency optical modes. Furthermore, Te alloying on Se sites creates a quinary high-entropy NaCl-type solid solution AgSnSbSe3-xTex with randomly disordered cations and anions. The extra point defects and lattice dislocations lead to glass-like lattice thermal conductivities of ∼0.32 W m–1 K–1 at 723 K and higher hole carrier concentration than AgSnSbSe3. Concurrently, the Te alloying promotes greater convergence of the multiple valence band maxima in AgSnSbSe1.5Te1.5, the composition with the highest configurational entropy. Facilitated by these favorable modifications, we achieve a high average power factor of ∼9.54 μW cm–1 K–2 (400–773 K), a peak thermoelectric figure of merit ZT of 1.14 at 723 K, and a high average ZT of ∼1.0 over a wide temperature range of 400–773 K in AgSnSbSe1.5Te1.5.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/jacs.0c07803?goto=supporting-info">https://pubs.acs.org/doi/10.1021/jacs.0c07803</a>.Experimental and computational details; Figures S1–S13 and Tables S1 and S2 (<a class="ext-link" href="/doi/suppl/10.1021/jacs.0c07803/suppl_file/ja0c07803_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

First-Principles Study of the Electronic, Optical, and Lattice Vibrational Properties of Agsbte(2)

Electronic, optical and thermal properties of the hexagonal and fcc Ge2Sb2Te5 chalcogenide from first-principle calculations

Intrinsic Ultralow Lattice Thermal Conductivity in the Full-Heusler Compound Ba 2 Ag Sb

Electronic band structure of Sb2Te3

Low Lattice Thermal Conductivity Induced by Antibonding Sp-Hybridization in Sb2Sn2Te6 Monolayer with High Thermoelectric Performance: First-principles Calculations

Band Structure, Phonon Spectrum and Thermoelectric Properties of Ag3CuS2

Quantum Chemistry Calculation And Transport Of Bi2te3 And Sb2te3

Reducing Lattice Thermal Conductivity of the Thermoelectric Compound AgSbTe2 (P4/mmm) by Lanthanum Substitution: Computational and Experimental Approaches

Elaborating the Crystal Structures of Mgagsb Thermoelectric Compound: Polymorphs and Atomic Disorders

Enhanced Thermoelectric Performance Of (Sb0.75bi0.25)(2)Te-3 Compound From First-Principles Calculations

Thermoelectric performance of (AgBiTe2)1-x(SnTe)x with stable cubic enabled by enhanced configurational entropy

Elastic, electronic, and optical properties of Sb2S3 and Sb2Se3 compounds: ab initio calculation

Phase compositions, nanoscale microstructures and thermoelectric properties in Ag2-ySbyTe1+y alloys with precipitated Sb2Te3 plates

Electronic Structure, Transport and Phonons of SrAg$Ch$F ($Ch$=S, Se, Te): Bulk Superlattice Thermoelectrics

First-Principles Theory of Competing Order Types, Phase Separation, and Phonon Scattering in Thermoelectric Pb-Sb-Ag-Te Alloys

Topological Surface States and Weak Thermal Phonon Anharmonicity of Low-Lying Phonons in GeSb2Te4

Study of the Defect Chemistry in Ag 2 Q (Q = S, Se, Te) by First-principle Calculations

High Thermoelectric Performance in the New Cubic Semiconductor AgSnSbSe 3 by High-Entropy Engineering

First-principles Study on the Structural, Electronic, Elastic and Thermal Properties of Ag2O2S

Electronic, vibrational and thermodynamic properties of beta-HgS (metacinnabar), HgSe and HgTe

Cubic AgMnSbTe 3 Semiconductor with a High Thermoelectric Performance