Preparation Of A Highly Conductive Al2o3/Tin Interlayer Nanocomposite Through Selective Matrix Grain Growth

Xh Jin,L Gao
DOI: https://doi.org/10.1111/j.1551-2916.2005.00831.x
IF: 4.186
2006-01-01
Journal of the American Ceramic Society
Abstract:An electroconductive TiN/Al2O3 nanocomposite was prepared by a selective matrix grain growth method, using a powder mixture of submicrosized alpha-Al2O3, nanosized gamma-Al2O3, and TiN nanoparticles synthesized through an in situ nitridation process. During sintering, a self-concentration of TiN nanoparticles at the matrix grain boundary occurred, as a result of the selective growth of large alpha-Al2O3 matrix grains. Under suitable sintering conditions, a typical interlayer nanostructure with a continuous nanosized TiN interlayer was formed along the Al2O3 matrix grain boundary, and the electroconducting behavior of the material is-as significantly improved. Twelve volume percent TiN/Al2O3 nanocomposite with such an interlayer nanostructure showed an unprecedentedly low resistivity of 8 x 10(-3) Omega center dot cm, which was more than two orders lower than the TiN/Al2O3 nanocomposite without such an interlayer nanostructure.
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