Abstract:Recent developments of solution‐processed bulk‐heterojunction organic photovoltaic (OPV) cells have demonstrated power conversion efficiencies (PCEs) as high as 18% for single‐junction devices. Such a high PCE in addition to its desirable lightweight property and high mechanical flexibility can realize high specific power and small stowed volume, which are key considerations when choosing PV for space missions. To take one important step forward, their resilience to ionizing radiation should be well studied. Herein, the effect of proton irradiation at various fluences on the performance of benchmark OPV cells is explored under AM0 illumination. The remaining device performance is found to decrease with increasing proton fluence, which correlates to changes in electrical and chemical properties of the active layer. By redissolving the devices, the solubility of the active layer is found to decrease with increasing proton fluence, suggesting that the active materials are likely cross‐linked. Additionally, Raman studies reveal conformational changes of the polymer leading to a higher degree of energetic disorder. Despite a drop in performance, the retaining percentage of the performance is indeed higher than the current market‐dominating space PV technology—III–V semiconductor‐based PV, demonstrating a high potential of the OPV cell as a candidate for space applications. High energy proton irradiation causes organic photovoltaic (OPV) cells degradation. The solubility of the active layer PTB7‐Th:PC71BM is substantially reduced, suggesting cross‐linking can happen due to the irradiation. Raman spectroscopy reveals conformational changes on the PTB7‐Th at high proton fluence. Interestingly, despite a drop in performance, the percentage drop is in fact lower than for III–V semiconductor‐based PV.

Property Degradation of GaAs/Ge Solar Cell at Proton Irradiation

Proton irradiation effects on GaInP/GaAs/Ge triple junction cells

Effects of proton radiation on the InGaAs component cells of inverted metamorphic four-junction solar cells

Effects of 100 MeV proton irradiation on the performance of P3HT-based perovskite solar cells

Void Formation and Radiation‐induced Ion Migration in Perovskite Solar Cells under 10 MeV Proton Radiation

Proton Radiation Hardness of Organic Photovoltaics: An In‐Depth Study

Radiation Hardness of Perovskite Solar Cells Based on Aluminum‐Doped Zinc Oxide Electrode Under Proton Irradiation

A study of Proton Radiation Effects on a Silicon Based Solar Cell

The Degradation of Cu2ZnSn(S,Se)4 Kesterite Thin Film Solar Cells Induced by Proton Radiation

1 MeV electron irradiation effect and damage mechanism analysis of flexible GaInP/GaAs/InGaAs solar cells

Investigation of degradation characteristics of electron irradiated GaInP/InGaAs/Ge solar cell by numerical simulation model

Theoretical Analysis on GaAs Sub-Cell Doping Concentration for Triple-Junction Solar Cells Irradiated by Proton Based on TCAD Simulation

Degeneration and damage mechanism of Pseudomorphic Glass under 170 keV proton irradiation

Simulation of proton-induced primary displacement damage in GaAs under different ambient temperatures

Ab initio electronic stopping power for protons in Ga$_{0.5}$In$_{0.5}$P/GaAs/Ge triple-junction solar cells for space applications

Simulation of irradiation damage in CsPbI3-based perovskite solar cells by energetic protons

Proton irradiation damage and annealing effects in ON Semiconductor J-series silicon photomultipliers

Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells

Effects of Carrier Transport Layers on Performance Degradation in Perovskite Solar Cells under Proton Irradiation

Effects of electron radiation on shielded space triple-junction GaAs solar cells

In-depth investigation of low-energy proton irradiation effect on the structural and photoresponse properties of ε-Ga2O3 thin films