Readout Circuit for CMOS Active Pixel Image Sensor

T Kwok,JJ Zhong,T Wilkinson,WA Crossland

DOI: https://doi.org/10.1049/el:20020248

2002-01-01

Electronics Letters

Abstract:The design and simulation results of a new readout circuit for a CMOS active pixel image sensor are presented. This scheme removes the fixed pattern noise and reduces the signal degradation while offering an increase in readout speed, compared with the conventional approach.

What problem does this paper attempt to address?

A Reconfigurable Convolution-in-Pixel CMOS Image Sensor Architecture

Ruibing Song,Kejie Huang,Zongsheng Wang,Haibin Shen

DOI: https://doi.org/10.1109/tcsvt.2022.3179370

IF: 5.859

2022-01-01

IEEE Transactions on Circuits and Systems for Video Technology

Abstract:The separation of the data capture and analysis in modern vision systems has led to a massive amount of data transfer between the end devices and cloud computers, resulting in long latency, slow response, and high power consumption. Efficient hardware architectures are under focused development to enable Artificial Intelligence (AI) at the resource-limited sensing devices. One of the most promising solutions is to enable Processing-in-Pixel (PIP) scheme. However, the conventional schemes suffer from the low fill-factor issue. This paper proposes a PIP based Complementary Metal-Oxide-Semiconductor (CMOS) sensor architecture, which allows convolution operation before the column readout circuit to significantly reduce the overall power consumption while improving the resource utilization of the succeeding deep learning accelerator. The simulation results show that the proposed architecture could support the computing efficiency up to 3.37 TOPS/W at the 8-bit weight configuration, which is four times as high as the conventional schemes after normalization. The transistors required for each pixel are only 3.5T, significantly improving the fill-factor.
A Cmos Image Sensor For Monochromatic Spectrum Imaging

Chen Yuan,Xu Zhihai,Feng Huajun

DOI: https://doi.org/10.1109/IST.2009.5071592

2009-01-01

Abstract:A CMOS image sensor based on standard CMOS process which can image the monochromatic spectrum image was developed. It took the advantage of the penetration depth differences of monochromatic light in silicon. Through the usage of double junctions photodiode which can sense short wavelength and long wavelength illumination simultaneously, we got the final device response which increase monotonically with the wavelength, and the wavelength can be known through this monotonicity. First we introduced the basic principle of the device, then ideas in pixel design and array readout circuitry were given, finally we measured the manufactured device, the QEs of the device and the monotonic relationship between the device and the wavelength of the monochromatic spectrum were given.
14-Bit Column Readout Circuits with Single-to-differential PGA Using Intentional Offset and Two-Step Scaled-Reference SAR ADC for CMOS Image Sensors

Zhelu Li,Wei Fan,Jianxiong Xi,Lenian He,Ning Xie,Kexu Sun

DOI: https://doi.org/10.1007/s10470-018-1215-4

IF: 1.321

2018-01-01

Analog Integrated Circuits and Signal Processing

Abstract:This paper proposes a 14-bit fully differential Successive Approximation Register (SAR) Analog-to-Digital Converter (ADC) with a programmable gain amplifier (PGA) used in the readout circuit of CMOS image sensor (CIS). SAR ADC adopts two-step scaled-reference voltages to realize 14-bit conversion, aimed at reducing the scale of capacitor array and avoiding using calibration to mitigate the impact of offset and mismatch. However, the reference voltage self-calibration algorithm is applied on the design to guarantee the precision of reference voltages, which affects the results of conversion. The three-way PGA provides three types of gains: 3x, 4x, and 6x, and samples at the same time to get three columns of pixel signal and increase the system speed. The pixel array of the mentioned CIS is 1026 × 1024 , and the pixel pitch is 12.5 μ m × 12.5 μ m . The prototype chip is fabricated in the 180 nm CMOS process, and both digital and analog voltages are 3.3 V. The total area of the chip is 6.25 × 18.38 mm2. At 150 kS/s sampling rate, the SNR of SAR ADC is 71.72 dB and the SFDR is 82.91 dB. What is more, the single SAR ADC consumes 477.2 uW with the 4.8 V PP differential input signal and the total power consumption of the CIS is about 613 mW.
Design of a Sample-and-Hold Circuit for High Speed CMOS Image Sensor

CAI Kunming,DING Koubao,LUO Hao,HAN Yan

DOI: https://doi.org/10.3969/j.issn.1004-1699.2010.07.015

2010-01-01

Abstract:A sample-and-hold circuit utilized in high speed integrator array is designed. A new T type switch which can restrain the substrate biasing effect is designed to replace the traditional CMOS transmission gate switch. Thus, the linearity of the switch’s turn-on resistance can be assured because the changes of threshold voltage caused by the substrate biasing effect is limited. Also,this new T type structure can reduce the charge feed through effect under high frequency input,thus,a better turn-off isolation characteristic can be achieved . Based on SMIC 0. 13 μm Standard CMOS technique,a sample-and-hold circuit applicable to the CMOS image sensor is designed. Spectre simulation results show that the Signal-to-Noise Distortion Ratio and Spurs Free Dynamic Range is 85. 5 dB and 92. 87 dB respectively under the Nyquist input frequency,the power consumption is only 32. 8 mW.
A 14-bit 150KS/s SAR ADC with PGA for CMOS Image Sensor

Xiaowei Zhang,Wei Fan,Jianxiong Xi,Lenian He

DOI: https://doi.org/10.1109/ISSPIT47144.2019.9001750

2019-01-01

Abstract:This paper introduces a 14-bit 150KS/s successive approximation register (SAR) analog-to-digital converter (ADC) with programmable gain amplifier (PGA) used in CMOS Image Sensor (CIS), which doesn't adopt calibration module as well. The pixel size is 12.5 um × 12.5 um and the pixel array of mentioned CIS is 1026 × 1024. In order to realize the goal of converting more pixel signal, three-way PGA works at the same time to sample three columns of pixel signal and then sends the amplified signal into SAR ADC step by step. What's more, multiple reference voltages and complementary capacitor array are used to reduce the capacitor number and improve resolution, accepting 4.8 V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">pp</inf> differential input signal. The prototype circuit is fabricated in 180 nm 3.3-V CMOS process. The total area of chip is 26.25 × 18.38 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . At a 3.3-V supply and 150 KS/s sampling rate, the ADC with PGA achieves SNR of 71.72 dB and SFDR of 82.91 dB while the single ADC consumes 477.2 uW.
Simulations and Design of a Single-Photon CMOS Imaging Pixel Using Multiple Non-Destructive Signal Sampling

Konstantin D Stefanov,Martin J Prest,Mark Downing,Elizabeth George,Naidu Bezawada,Andrew D Holland

DOI: https://doi.org/10.3390/s20072031

2020-04-04

Abstract:A single-photon CMOS image sensor (CIS) design based on pinned photodiode (PPD) with multiple charge transfers and sampling is described. In the proposed pixel architecture, the photogenerated signal is sampled non-destructively multiple times and the results are averaged. Each signal measurement is statistically independent and by averaging, the electronic readout noise is reduced to a level where single photons can be distinguished reliably. A pixel design using this method was simulated in TCAD and several layouts were generated for a 180-nm CMOS image sensor process. Using simulations, the noise performance of the pixel was determined as a function of the number of samples, sense node capacitance, sampling rate and transistor characteristics. The strengths and limitations of the proposed design are discussed in detail, including the trade-off between noise performance and readout rate and the impact of charge transfer inefficiency (CTI). The projected performance of our first prototype device indicates that single-photon imaging is within reach and could enable ground-breaking performances in many scientific and industrial imaging applications.
A low power 10‐bit 1 MS/s cyclic analog to digital converter for complementary metal oxide semiconductors image sensors with comparator‐based switched‐capacitor technique

Ziyang Zhang,Kaiming Nie,Dongxing Fang,Jiangtao Xu

DOI: https://doi.org/10.1002/cta.4060

IF: 2.378

2024-05-10

International Journal of Circuit Theory and Applications

Abstract:This paper proposes a power‐optimised column‐parallel cyclic ADC for CMOS image sensor readout circuits. The design combines a 2.5‐bit/cycle architecture with a comparator shutdown technique based on the Comparator‐Based Switched Capacitor (CBSC) circuits, which reduces the operating time of the threshold detection comparator compared to conventional CBSC circuits. This paper proposes a power‐optimized column‐parallel cyclic analog to digital converter (ADC) for complementary metal oxide semiconductors (CMOS) image sensor readout circuits. The design combines a 2.5‐bit/cycle architecture with a comparator shutdown technique based on the comparator‐based switched‐capacitor (CBSC) circuits, which results in a significant reduction in the operating time of the threshold detection comparator compared with conventional CBSC circuits. This reduction in operating time leads to power savings as the threshold detection comparator can be shut down quickly. The paper also presents a comprehensive analysis of the nonideal factors of CBSC circuits and the coarse and fine conversion allocation scheme. The 10‐bit two‐stage comparator‐based cyclic ADC is designed in a 110 nm 1P4 M CMOS technology. Simulation results show that the effective number of bit (ENOB) is 9.7 bits, with each column consuming 103 μ W of power. The proposed cyclic ADC has a figure of merit (FOM) of 123 fJ/conv‐step. Compared with conventional structures, the proposed design reduces the power consumption of the ADC by 34.3% while maintaining the same level of performance.

engineering, electrical & electronic
Performance analysis of a color CMOS photogate image sensor

A.J. Blanksby,M.J. Loinaz

DOI: https://doi.org/10.1109/16.817567

IF: 3.1

2000-01-01

IEEE Transactions on Electron Devices

Abstract:The performance of a color CMOS photogate image sensor is reported. It is shown that by using two levels of correlated-double sampling it is possible to effectively cancel all fixed-pattern noise due to read-out circuit mismatch. Instead the fixed-pattern noise performance of the sensor is limited by dark current nonuniformity at low signal levels, and conversion gain nonuniformity at high signal levels. It is further shown that the imaging performance of the sensor is comparable to low-end CCD sensors but inferior to that reported for high-end CCD sensors due to low quantum efficiency, high dark current, and pixel cross-talk. As such the performance of CMOS sensors is limited at the device level rather than at the architectural level. If the imaging performance issues can be addressed at the fabrication process level without increasing cost or degrading transistor performance, CMOS has the potential to seriously challenge CCD as the solid-state imaging technology of choice due to low power dissipation and compatibility with camera system integration.

engineering, electrical & electronic,physics, applied
High Performance CMOS Image Sensor for Low Light Imaging

Steve Mims,Brett Frymire,B. Fowler,Dan Laxson

Abstract:We present a prototype CMOS image sensor (CIS) intended for low light imaging applications. The prototype sensor contains 320 x 240 pixels with 36 different pixel architectures. Pixel size is 10.8 μm x 10.8 μm. The measured QE is 55% at 555nm, dark current is 11pA/cm at 30 ̊C, read noise is 1.9eRMS operating at 30 Mpixels/sec, and the conversion gain is 1046 μV/e-. We present the pixel design that achieved the best performance taking into account dark current, image lag, QE, and read noise. We also describe the low noise readout circuitry that achieves the lowest read noise published to date for any area CIS.

Physics,Engineering
An Improved Low Power Cmos Readout Circuit For Focal Plane Array

Zg Chen,Xy Li,Lj Ji,Jz Han,Sg Yu

DOI: https://doi.org/10.1109/ICASIC.2001.982698

2001-01-01

Abstract:An improved low power CMOS snapshot readout structure called OESCA (Odd-Even Snapshot Charge Amplifier) for focal plane array (FPA) is presented in this paper. Using two low power charge amplifiers as column readout circuit (one is for the odd-row readout and the other is for the even-row), this structure not only can eliminate the influence of column bus parasitic capacitance, but also can save 15% power dissipation of the column readout stage. The pixel circuit includes only three NMOSFETs. Thus, it is very suitable for large-format small-pixel lower-power readout circuit. An experimental 64 X 64 OESCA chip has been fabricated with 1.2-mum Double-Poly Double-Metal (DPDM) n-well CMOS technology. The charge handling capacity is 10.37pC with pixel size 50 X 50mum(2). A description of the readout circuit structure, pixel circuit, operation principle is given in detail. Both excellent simulation results and experimental results of the fabricated OESCA readout chip are presented.
A Single-Transistor Active Pixel Cmos Image Sensor Architecture

Zhang Guo-An,Zhang Dong-Wei,He Jin,Su Yan-Mei,Wang Cheng,Chen Qin,Liang Hai-Lang,Ye Yun

DOI: https://doi.org/10.1088/0256-307x/29/3/030702

2012-01-01

Abstract:A single-transistor CMOS active pixel image sensor (1T CMOS APS) architecture is proposed. By switching the photosensing pinned diode, resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source follower. Thus, the reset and selected transistors can be removed. In addition, the reset and selected signal lines can be shared to reduce the metal signal line, leading to a very high fill factor. The pixel design and operation principles are discussed in detail. The functionality of the proposed 1T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35 mu m CMOS AMIS technology.
An Energy-Efficient Readout Circuit Based on Incremental Delta-Sigma ADC with Decimation Filter for CMOS Image Sensors

Junsheng Chen,Lingxin Meng,Menglian Zhao,Zhichao Tan

DOI: https://doi.org/10.1109/APCCAS55924.2022.10090386

2022-01-01

Abstract:This paper presents an energy-efficient readout circuit based on incremental delta-sigma ADC (IADC) with a decimation filter for CMOS image sensors (CIS). A single-end 3 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rd</sup> -order 1-bit inverter-based delta-sigma ADC is embedded to achieve high resolution conversion efficiently. In addition, the correlated level shifting (CLS) technique was adopted, which enhances the DC gain of the integrator from 42.7 dB to 62.4 dB and extends the output swing from 85% to 100% of the full scale. A compact decimation filter with digital correlation double sampling (CDS) was used, which consists of only a counter and two digital integrators. The prototype chip is designed in a 55 nm CMOS process with a 1.2V supply voltage. Transient noise post-simulation results reveal the decimation filter consumes <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\boldsymbol{33.0}\ \mu\mathbf{W}$</tex> and the IADC consumes <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\boldsymbol{30.2}\ \mu \mathbf{W}$</tex> while achieving 82.8 dB SNR in 25 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\boldsymbol{\mu}\mathbf{s}$</tex> conversion time, resulting in a Schreier FoM of 171.0 dB.
A Low-Noise CMOS Image Sensor With Digital Correlated Multiple Sampling

Nan Chen,Shengyou Zhong,Mei Zou,Jiqing Zhang,Zhongshun Ji,Libin Yao

DOI: https://doi.org/10.1109/tcsi.2017.2724855

2018-01-01

Abstract:This paper presents a low noise CMOS image sensor using conventional 3T active pixel with Nwell/Psub diode as photo detector. Both fixed pattern noise (FPN) and temporal noise are suppressed by the proposed digital correlated multiple sampling (DCMS) technology. FPN and temporal noise from pixel, buffer circuit, and column-parallel ADC are analyzed in detail, and the total noise with DCMS is derived. General expression of 1/f noise with correlated multiple sampling is given, illustrating impact of delay time in DCMS. Output noise of image sensor, frame rate, power, and area are affected by order and oversampling ratio of sigma–delta ADC, which are discussed for practical design. A prototype CMOS image sensor with $800\times 600$ pixel array and second-order incremental sigma–delta ADCs is implemented with the 0.35- $\mu \text{m}$ standard CMOS process. Measurement results of the implemented image sensor show a column FPN of 0.009%, an input referred noise of 3.5 $\text{e}^{-}_{\mathrm {\mathbf {rms}}}$ , and a dynamic range of 84 dB with oversampling ratio of 255. This indicates that image sensor with low noise can be achieved by DCMS without the CIS process and column amplification.

engineering, electrical & electronic
Research of Active Pixel Structure Based on Standard CMOS Technology

ZHOU Xin,ZHU Da-zhong,GUO Wei

DOI: https://doi.org/10.3969/j.issn.1004-2474.2005.04.030

2005-01-01

Abstract:In this paper, the research of active pixel sensors with different photodiodes structures is carried out. The photodiodes structures include P~+/N-well/P-sub and traditional N~+/P-sub. The size of each pixel is 100 μm×100 μm, and the fill factor of the two structures are 77.6% and 89% separately. The chip is fabricated in CSMC with 0.6μm double metal double poly CMOS process. Measurement results show that P~+/N-well/P-sub structure has low dark current, large photo-response, high sensitivity and large dynamic range. When the reset signal frequency is adjusted according to illumination intensity, the total dynamic range of the P~+/N-well/P-sub sensor can be increased to 139.8 dB. With P~+/N-well/P-sub structure photodiodes, performance of pixel is improved.
A Low-Noise CTIA-based Pixel with CDS for SWIR Focal Plane Arrays

Yi Zhuo,Wengao Lu,Shanzhe Yu,Ye Zhou,Jiaqi Kong,Yacong Zhang,Zhongjian Chen

DOI: https://doi.org/10.1109/icicm54364.2021.9660360

2021-01-01

Abstract:This paper proposes a readout integrated circuit (ROIC) pixel for short-wavelength infrared (SWIR) focal plane arrays, including an in-pixel capacitive trans-impedance amplifier (CTIA) with correlated double sampling (CDS) circuit. An inverter-based operational amplifier is proposed, which can obtain higher gain under the same power consumption, thereby effectively reducing thermal noise. At the same time, a compact inpixel CDS is proposed, which uses fewer switches to reduce the pixel area. This pixel circuit is designed in 180nm 1P5M CMOS process. The simulation result shows that the output swing of the circuit is 1.2V, and the linearity within the output swing reaches 99.9%. The integrating capacitor is 8fF, and the pixel output noise after CDS is 11.38e-, which is 48% lower than the traditional CTIA circuit.
Skipper-in-CMOS: Non-Destructive Readout with Sub-Electron Noise Performance for Pixel Detectors

Agustin J. Lapi,Miguel Sofo-Haro,Benjamin C. Parpillon,Adi Birman,Guillermo Fernandez-Moroni,Lorenzo Rota,Fabricio Alcalde Bessia,Aseem Gupta,Claudio Chavez Blanco,Fernando Chierchie,Julie Segal,Christopher J. Kenney,Angelo Dragone,Shaorui Li,Davide Braga,Amos Fenigstein,Juan Estrada,Farah Fahim

2024-02-20

Abstract:The Skipper-in-CMOS image sensor integrates the non-destructive readout capability of Skipper Charge Coupled Devices (Skipper-CCDs) with the high conversion gain of a pinned photodiode in a CMOS imaging process, while taking advantage of in-pixel signal processing. This allows both single photon counting as well as high frame rate readout through highly parallel processing. The first results obtained from a 15 x 15 um^2 pixel cell of a Skipper-in-CMOS sensor fabricated in Tower Semiconductor's commercial 180 nm CMOS Image Sensor process are presented. Measurements confirm the expected reduction of the readout noise with the number of samples down to deep sub-electron noise of 0.15rms e-, demonstrating the charge transfer operation from the pinned photodiode and the single photon counting operation when the sensor is exposed to light. The article also discusses new testing strategies employed for its operation and characterization.

Instrumentation and Methods for Astrophysics,Instrumentation and Detectors
Correlated double sample design for CMOS image readout IC

Jun Gao,Zhong Jian Chen,Wen-Gao Lu,Wentao Cui,Lijiu Ji

DOI: https://doi.org/10.1109/icsict.2004.1436861

2004-01-01

Abstract:A Correlated Double Sample (CDS) Stage design is proposed for CMOS image Readout IC (ROIC) in this paper. A capacitor transimpedance amplifier (CTIA) stage is used as front stage. A parasitic insensitive Switch Capacitor (SC) circuit is used to realize CDS on chip. This circuit also supports Integration-While-Read (IWR) mode. Then channels low frequency noise is reduced and frame frequency is increased. A circuit based on this method is fabricated with 1.2 m CMOS technology. The simulation and measurement results are also given in this paper. © 2004 IEEE.
Achieving Single-Electron Sensitivity at Enhanced Speed in Fully-Depleted CCDs with Double-Gate MOSFETs

Miguel Sofo-Haro,Kevan Donlon,Juan Estrada,Steve Holland,Farah Fahim,Chris Leitz

2023-10-21

Abstract:We introduce a new output amplifier for fully-depleted thick p-channel CCDs based on double-gate MOSFETs. The charge amplifier is an n-type MOSFET specifically designed and operated to couple the fully-depleted CCD with high charge-transfer efficiency. The junction coupling between the CCD and MOSFET channels has enabled high sensitivity, demonstrating sub-electron readout noise in one pixel charge measurement. We have also demonstrated the non-destructive readout capability of the device. Achieving single-electron and single-photon per pixel counting in the entire CCD pixel array has been made possible through the averaging of a small number of samples. We have demonstrated fully-depleted CCD readout with better performance than the floating diffusion and floating gate amplifiers available today, in both single and multisampling regimes, boasting at least six times the speed of floating gate amplifiers.

Instrumentation and Detectors,Earth and Planetary Astrophysics,Instrumentation and Methods for Astrophysics,High Energy Physics - Experiment
An area‐effective and low‐power single‐slope ADC for DCG imaging CMOS image sensor

Rui Yang,Xiuyu Wang,Changju Liu,Biao Ma,Kaiming Nie,Jiangtao Xu

DOI: https://doi.org/10.1002/cta.4109

IF: 2.378

2024-05-28

International Journal of Circuit Theory and Applications

Abstract:This paper introduces a readout circuit structure tailored for high dynamic range CISs utilizing DCG imaging technology, using only one ADC for A/D conversion of HCG signals and LCG signals, which greatly reduces the area and power consumption of the readout circuit. Summary This paper introduces an area‐effective and low‐power readout circuit structure tailored for high dynamic range (HDR) CMOS image sensors (CISs) utilizing dual conversion gain (DCG) imaging technology. A switched capacitor amplifier, which is applied at the comparator input port of the column‐parallel single‐slope analog‐to‐digital converter (SS ADC), is proposed to compensate for the charge injection and clock feed‐through introduced when the pixel switches between high conversion gain (HCG) and low conversion gain (LCG) modes. The proposed SS ADC is supplemented by the integration of a configurable counter, and the counter is specifically crafted for performing the A/D conversion of the readout voltage within a DCG pixel. Compared to the conventional DCG readout circuit, the proposed readout circuit use only one ADC for A/D conversion of HCG signals and LCG signals, which greatly reduces the area and power consumption of the readout circuit. Simulation results under 110 nm CMOS technology illustrate that the proposed 10‐bit SS ADC has a DNL of +0.78/−0.91 LSB and an INL of +1.91/−1.69 LSB, with a SNR of 57.2 dB and a SNDR of 55.95 dB, corresponding to an ENOB of 9 bits. The power consumption of the proposed SS ADC is 56.4 μW per column with a conversion time of 12 μs, and the simulation results show that the power consumption is 23.35% lower than the conventional structure and the area is saved by 24.69%.

engineering, electrical & electronic
Low-light-level CMOS imaging sensor with CTIA and digital correlated double sampling

Mei Zou,Ji-qing Zhang,Sheng-you Zhong,Zheng-fen Li,Li-bin Yao

DOI: https://doi.org/10.1007/s10470-019-01533-8

IF: 1.321

2019-09-17

Analog Integrated Circuits and Signal Processing

Abstract:This paper presents two low-light-level CMOS image sensors with capacitive transimpedance amplifier (CTIA) and digital correlated double sampling (CDS). In order to achieve high sensitivity for low-light-level CMOS image sensor, the CTIA pixel circuit with a small integration capacitor is used. In order to remove the noise of the low-light-level CMOS image sensor, a digital CDS is designed, which realizes the subtraction algorithm between the reset signal and pixel signal off-chip. The pixel reset noise, pixel fixed-pattern noise (FPN) and the column FPN can be greatly reduced by this digital CDS. Two test chips based on this method with 256 × 256 pixel array are fabricated in a 0.35 μm CMOS technology, one is based on DC-coupled CTIA pixel circuit, and the other one is based on AC-coupled CTIA pixel circuit. These two chips are designed with the same column sigma-delta analog-to-digital (∑∆ ADC), whose resolution is 15-bit. At a frame rate of 7 fps, the low-light-level CMOS image sensor with DC-coupled CTIA pixel circuit and digital CDS can capture recognizable images with the illumination down to 0.05 lux. The low-light-level CMOS image sensor with AC-coupled CTIA pixel circuit can reduce the dark current by reducing the reverse bias voltage of the photodiode.

engineering, electrical & electronic,computer science, hardware & architecture

Readout Circuit for CMOS Active Pixel Image Sensor

A Reconfigurable Convolution-in-Pixel CMOS Image Sensor Architecture

A Cmos Image Sensor For Monochromatic Spectrum Imaging

14-Bit Column Readout Circuits with Single-to-differential PGA Using Intentional Offset and Two-Step Scaled-Reference SAR ADC for CMOS Image Sensors

Design of a Sample-and-Hold Circuit for High Speed CMOS Image Sensor

A 14-bit 150KS/s SAR ADC with PGA for CMOS Image Sensor

Simulations and Design of a Single-Photon CMOS Imaging Pixel Using Multiple Non-Destructive Signal Sampling

A low power 10‐bit 1 MS/s cyclic analog to digital converter for complementary metal oxide semiconductors image sensors with comparator‐based switched‐capacitor technique

Performance analysis of a color CMOS photogate image sensor

High Performance CMOS Image Sensor for Low Light Imaging

An Improved Low Power Cmos Readout Circuit For Focal Plane Array

A Single-Transistor Active Pixel Cmos Image Sensor Architecture

An Energy-Efficient Readout Circuit Based on Incremental Delta-Sigma ADC with Decimation Filter for CMOS Image Sensors

A Low-Noise CMOS Image Sensor With Digital Correlated Multiple Sampling

Research of Active Pixel Structure Based on Standard CMOS Technology

A Low-Noise CTIA-based Pixel with CDS for SWIR Focal Plane Arrays

Skipper-in-CMOS: Non-Destructive Readout with Sub-Electron Noise Performance for Pixel Detectors

Correlated double sample design for CMOS image readout IC

Achieving Single-Electron Sensitivity at Enhanced Speed in Fully-Depleted CCDs with Double-Gate MOSFETs

An area‐effective and low‐power single‐slope ADC for DCG imaging CMOS image sensor

Low-light-level CMOS imaging sensor with CTIA and digital correlated double sampling