Effect of Magnetic Metal Cluster Doping on Dielectric Property of Laalo3 Thin Films Prepared by Pulsed Laser Deposition

H Jiang,XY Qiu,GL Yuan,H Zhu,JM Liu
DOI: https://doi.org/10.1016/j.mssp.2004.09.004
IF: 4.1
2004-01-01
Materials Science in Semiconductor Processing
Abstract:The thin films of Ni-doped dielectric LaAlO3 (LAO) by a co-ablation of magnetic metal Ni and dielectric LAO on silicon-based substrates have been prepared by pulsed laser deposition. A significant enhancement of dielectric constant of LAO upon a Ni doping is observed. Furthermore, the dielectric modulation by applying a magnetic field to the samples is verified, obviously due to the ferromagnetism of Ni metal clusters embedded in the LAO thin films. A series of microstructural and dielectric characterizations on the as-prepared thin films has been performed and the mechanism underlying the dielectric enhancement upon the Ni doping is discussed.
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