Correction: Valence State‐Dependent Ferromagnetism in Mn‐Doped NiO Thin Films
Yan Wen-Sheng,Zheng Sun,Zhongrui Li,Qinghua Liu,Tao Yao,Zhiyun Pan,Chao Wang,Fengchun Hu,Yong Jiang,Zeming Qi,Fei Zeng,Wei Shi-Qiang
DOI: https://doi.org/10.1002/adma.201290008
IF: 29.4
2012-01-01
Advanced Materials
Abstract:The authors regret two mistakes in Figure 1 and the Experimental Section of the above article published on the Early View platform of Advanced Materials. The correct Figure 1 is: (a) Schematic band structure of transition-metal doped oxide semiconductors with impurity bands induced by structural defects. (b) Partial DOS for NiO: (top panel) with a Ni vacancy, (middle panel) with doped Mn2+, and (bottom panel) with doped Mn3+. Further, the last section of the Experimental Section was missing the institutions at which the experiments were carried out and should read: […] The Mn K-edge X-ray absorption fine structure (XAFS) spectra were collected in fluorescence mode at room temperature at the U7C beamline of National Synchrotron Radiation Laboratory (NSRL), China. The Mn L3-edge and O K-edge X-ray absorption near-edge structure (XANES) spectra were collected in a mode of sample drain current under a vacuum better than 5 × 10−5 Pa at the U19 beamline of NSRL.