Abstract:In future nanoscale complementary metal-oxide-semiconductor (CMOS) devices, the high dielectric constant (high-k) gate dielectric film will be shrunk down to a couple of nanometers or down to the sub-nanometer range in the sense of oxide equivalent thickness (EOT). However, as high-k materials, including La2O3 which has been considered to be one of the promising next generation gate dielectric materials, are only marginally stable on the silicon substrate, some nominal temperature processes used for the device fabrication may still give rise to interface reactions and result in a low-k interface layer which will be a critical constraint for achieving the ultrathin EOT gate dielectric film. In this work, some issues related to the material interaction at the lanthanum oxide/Si and lanthanum oxide/metal interfaces will be discussed with the supports of interface bonding structures as revealed by using angle-resolved x-ray photoelectron spectroscopy (ARXPS) measurements. We show that thermal annealing at temperature above 500 °C would result in the migration of Si atoms deep into the bulk of the La2O3 film and formation of silicate phases both at the interface and in the bulk. These effects would significantly lower the dielectric constant and thus increases the effective thickness of the dielectric film from the equivalent silicon oxide thickness (EOT) point of view.

Dramatic Reduction of Gate Leakage Current of Ultrathin Oxides Through Oxide Structure Modification

Enhanced Phonon-Energy Coupling: Dramatic Reduction of Leakage Current of Silicon Oxide

A New Physics Effect, Phonon-Energy-Coupling Enhancement, and Its Applications for Leakage Current Reduction of Gate Dielectrics

Mechanism for Generation of the Phonon-Energy-Coupling Enhancement Effect for Ultrathin Oxides on Silicon

Fundamental Mechanisms for Reduction of Leakage Current of Silicon Oxide and Oxynitride Through RTP-Induced Phonon-Energy Coupling

Phonon-energy-coupling Enhancement: Strengthening the Chemical Bonds of the SiO2∕Si System

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Phonon-Energy-Coupling Enhancement: Dramatic Improvement of the Reliability of Silicon MOS Transistors

Reduction Of Gate Leakage Current Of Hfsion Dielectrics Through Enhanced Phonon-Energy Coupling

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

A New Fabrication Procedure for Reproducibly Observing Leakage Current Reduction of SiO2 Due to Enhanced Phonon-Energy Coupling

Large Leakage-Current Reduction of Ultrathin Industrial SiON Wafers Induced by Phonon-Energy-Coupling Enhancement

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

Evolution of Interface Chemistry and Dielectric Properties of Hfo2/Ge Gate Stack Modulated by Gd Incorporation and Thermal Annealing

Reliable Observation Of Large Leakage-Current Reduction Of Thin Sio2 Induced By Phonon-Energy-Coupling Enhancement: Problems And Solution

The electronic structure at the atomic scale of ultrathin gate oxides

A Low-Leakage Epitaxial High-κ Gate Oxide for Germanium Metal-Oxide-Semiconductor Devices

Comparison of electrical characteristics for SiONx and HfZrOx gate dielectrics of MOSFETs with decoupled plasma nitridation treatment