Abstract:A new high-voltage and low-specific on-resistance （R on,sp ） adaptive buried electrode （ABE） silicon-on-insulator （SOI） power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET features are that the electrodes are in the buried oxide （BOX） layer, the negative drain voltage V d is divided into many partial voltages and the output to the electrodes is in the buried oxide layer and the potentials on the electrodes change linearly from the drain to the source. Because the interface silicon layer potentials are lower than the neighboring electrode potentials, the electronic potential wells are formed above the electrode regions, and the hole potential wells are formed in the spacing of two neighbouring electrode regions. The interface hole concentration is much higher than the electron concentration through designing the buried layer electrode potentials. Based on the interface charge enhanced dielectric layer field theory, the electric field strength in the buried layer is enhanced. The vertical electric field E I and the breakdown voltage （BV） of ABE SOI are 545 V/μm and -587 V in the 50 μm long drift region and the 1 μm thick dielectric layer, and a low R on,sp is obtained. Furthermore, the structure also alleviates the self-heating effect （SHE）. The analytical model matches the simulation results.

Analysis of Off-State and On-State Performance in A Silicon-On-Insulator Power Mosfet with A Low-K Dielectric Trench

Analysis of a High-Performance Ultra-Thin Body Ultra-Thin Box Silicon-on-insulator MOSFET with the Lateral Dual-Gates: Featuring the Suppression of the DIBL

Low on-Resistance SOI Dual-Trench-Gate MOSFET

Ultralow Specific On-Resistance High-Voltage SOI Lateral MOSFET

A Low On-Resistance SOI LDMOS Using a Trench Gate and a Recessed Drain

High-Voltage SOI Deep Trench LDMOS with Quasi Vertical Super Junction Structure

Novel High-Voltage Power Lateral Mosfet with Adaptive Buried Electrodes

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

A Low Specific on-Resistance SOI Trench MOSFET with a Non-Depleted Embedded p-Island

An Improved SOI P-Channel LDMOS With High- ${k}$ Gate Dielectric and Dual Hole-Conductive Paths

A RESURF-Enhanced P-Channel Trench SOI LDMOS with Ultralow Specific On-Resistance

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field

Study of the SOI LDMOS with Low Conduction Loss and Less Gate Charge

Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

A New SOI-LDMOS with Folded Silicon for Very Low On-Resistance

A High Figure-Of-Merit Soi Mosfet with A Double-Sided Charge Oxide-Trench

High-voltage SOI Lateral MOSFET with a Dual Vertical Field Plate

A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD Simulation Study

A New Strained-Silicon Channel Trench-gate Power MOSFET: Design and Analysis

Analysis and Optimization of SDOI Structure to Maximize the Intrinsic Performance of Extremely Scaled MOSFETs

Channel Design of Silicon-On-Insulator (soi) Mosfet for Low-Voltage Low-Power Application