Abstract:MoSi 2 N 4 , an emergent two-dimensional (2D) material, is gaining considerable attention for its superior properties as semiconductor, including exceptional ambient stability and high carrier mobility. However, the formation of intrinsic defects in semiconductors is often inevitable and can significantly impact device performance. Using density functional theory (DFT) calculations, we analyze the attributes and effects of intrinsic point defects in MoSi 2 N 4 . Our investigations first confirm the consistency of our results with current experimental data. After that, the formation energies of twelve native defects reveal that the antisite defect of molybdenum substituting for silicon (MoSi) defect dominates among all intrinsic defects. Under the constraint of overall charge neutrality, self-consistent Fermi level calculations reveal that MoSi 2 N 4 with only intrinsic defects exhibits intrinsic characteristics, highlighting its potential as a semiconductor device material. However, this intrinsic nature contradicts the p-type characteristics observed two-dimensional MoSi 2 N 4 . Yet in the later calculation of defect concentration, we find both n-type and p-type behavior can be easily realized by doping with appropriate impurities, with no compensatory effects from native defects. This suggests that the p-type characteristics of MoSi 2 N 4 during growth may result from p type impurities introduced under non-equilibrium growth conditions or silicon vacancy defects. Our findings not only demonstrate the potential of MoSi 2 N 4 in semiconductor device applications but also provide valuable guidance for future research on the defect mechanisms of this material.

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