Abstract:The percentage of substitutional doping of magnetic atoms (Mn) in group-IV-based dilute magnetic semiconductors can be increased by codoping with another conventional electronic dopant, as demonstrated from first-principles calculations recently [W. G. Zhu, Z. Y. Zhang, and E. Kaxiras, Phys. Rev. Lett. 100, 027205 (2008)]. Here, we report extensive theoretical investigations of the kinetic and thermodynamic characteristics of several codoped systems including bulk Si and Ge as hosts and various group-III and group-V dopants. The main findings are as follows. The n-p pairing of n-type codopants with p-type substitutional Mn is energetically stable in bulk Ge and Si. Mn atoms move from interstitial sites to substitutional sites easier (with lower kinetic barriers) in the presence of a neighboring n-type codopant. Magnetic coupling between two Mn atoms in bulk Ge oscillates between positive (ferromagnetic) and negative (antiferromagnetic) values with increasing Mn-Mn distance, but in Mn/As codoped Ge the coupling parameter remains positive at all distances beyond nearest neighbors and this qualitative difference does not change with the doping level. For Mn-doped Si, all coupling values except for the nearest-neighbor one are positive and do not change much upon codoping. We find an unconventional magnetic anisotropy in the codoped system, that is, the dependence of magnetic coupling on the relative positions of the magnetic ions and their neighboring donors. We map the calculated magnetic coupling to a classical Heisenberg model and employ Monte Carlo simulations to estimate the Curie temperature (T-c). We find that in Mn-doped Ge no ferromagnetic order exists for Mn concentrations ranging from 3.13% to 6%. Instead, a spin-glass phase transition occurs at similar to 5 K at 5% Mn doping. For Mn/As codoped Ge, T-c increases nearly linearly with the Mn concentration and reaches 264 K at 5% Mn doping.

First principles investigation of transition-metal doped group-IV semiconductors: R${_x}$Y$_{1-x}$ (R=Cr, Mn, Fe; Y=Si, Ge)

First principles calculations of the electronic structure and magnetic properties of Y(Fe,M)9.2 and Y(Fe,M)9.2C (M= Si, Ga, Zr)

Advancing Understanding of Structural, Electronic, and Magnetic Properties in 3D-Transition-metal TM-doped Α-Ga2o3 (TM = V, Cr, Mn, and Fe): A First-Principles and Monte Carlo Study

Influence of Ge-doping on the collinear and non-collinear antiferromagnetic phases of Mn 5 Si 3 alloy

Structural, Electronic and Magnetic Properties of Transition Metal Atom-Doped ZnS Dilute Magnetic Semiconductors: A First-Principles Study

Experimental And Theoretical Investigations On Ferromagnetic Nature Of Mn-Doped Dilute Magnetic Semiconductors

Interplay Between Cr And Mn Probed By Comparing The Magnetic Properties Of La1-Xsrxmn0.98cr0.02o3 And La1-Ysrymn0.98ga0.02o3

Ab Initio Investigation of Crystalline and Amorphous Gete Doped with Magnetic Impurities

First-Principles Study Of Transition Metal Impurities In Si

Effect of Doping Concentration on the Antiferromagnetic Transition Temperature of Multiferroic YMnO3: A First-Principles Study

Half-metallicity and Magnetism of GeTe Doped with Transition Metals V, Cr and Mn: a Theoretical Study from the Viewpoint of Application in Spintronics

Comparative study of the magnetism in and related compound

Ab Initio Study of Y Doping Effects on Electronic Structure and Magnetic Properties in Rh2Mn1–xYxZ (Z = Ge, Sn)

Electronic Structure and Magnetism of Ge(Sn)TMXTe1−X (TM = V, Cr, Mn): A First Principles Study

Optimization of Mn Doping in Group-Iv-Based Dilute Magnetic Semiconductors by Electronic Codopants

Exploring the impact of Cr-doping on the crystallographic and magnetic structure of antiferromagnetic alloy

Magnetic and electric properties of transition-metal doped wurtzite CdSe from first-principles calculations

Structure-dependent high- TC ferromagnetism in Mn-doped GeSe

Competition of ferromagnetism and antiferromagnetism in Mn-doped orthorhombic YCrO3

First-principles Computational Exploration of Ferromagnetism in Monolayer GaS Via Substitutional Doping.

Transitions from a Kondo-like diamagnetic insulator into a modulated ferromagnetic metal in FeGa <sub>3−y</sub> Ge <sub>y</sub>