Enhancement UV and VUV Photoluminescence of Zn2SiO4:Mn2+ with the Incorporation of Ga3+

Yan Hao,Yu-Hua Wang
DOI: https://doi.org/10.1016/j.jallcom.2008.03.022
IF: 6.2
2009-01-01
Journal of Alloys and Compounds
Abstract:Phosphors Zn1.92−xGaxSiO4:0.08Mn2+ (0 ≤ x ≤ 0.01) were synthesized through solid-state reaction and their photoluminescence in UV and VUV region were investigated. In Zn2SiO4:Mn2+ system before x = 0.0075 the Ga3+ could replace the site of Zn2+ and cause the reduction of unit cell volume; after x = 0.0075 the Ga3+ could replace the site of Si4+ and result in the increase of unit cell volume. At 254 nm excitation, the phosphor gives intense green emission (527 nm) and the optimum Ga3+ concentration was 0.0025. Furthermore, the emission intensity of Zn1.9175Ga0.0025SiO4:0.08Mn2+ was 142% of that of Zn1.92SiO4:0.08Mn2+. While at 147 nm excitation the optimum Ga3+ concentration was 0.005 and the emission intensity enhanced 20%. After Ga3+ doped the decay time of the sample became a little longer.
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