A growth mechanism of Si nanowires synthesized by gas condensation of SiO without any catalyst
Zhou Jianfeng,Han Min,Liu Minda,Song Fengqi,Wan Jianguo,Chen Yanfeng,Wang Guanghou
DOI: https://doi.org/10.1016/j.jcrysgro.2004.05.024
IF: 1.8
2004-01-01
Journal of Crystal Growth
Abstract:Si nanowires are synthesized at different temperature, 970°C and 1080°C, on Si substrate by gas condensation of pure SiO vapor without any metal catalysts. Scanning electron microscopy and transmission electron microscopy show the morphology of the synthesized nanostructures is significantly altered by temperature: in specimens prepared under 970°C, dispersed nanoparticles, nanoparticle assemblies and smooth nanowires are discovered at different deposition densities; in specimens prepared under 1080°C, only short nanowires growing directly from the substrate can be seen. The observation indicates there are different growth processes for the two kinds of morphologies. Their growth mechanisms are discussed. A model based on sintering, diffusion and clustering effects is suggested for the low-temperature process.