Abstract:HfO2, as a gate dielectric material for the charge trapping memory, has been studied extensively due to its merits such as high k value, good thermal stability, and conduction band offset relative to Si, etc.. In order to understand the reason why the charge trapping efficiency is improved by high k capture layer with respect to charge trapping type memory, the variation of HfO2 crystal texture induced by oxygen vacancy and the influences of it are investigated using the first principle calculation based on density functional theory. Results show that the distance of the nearest neighbor oxygen atom from oxygen vacancy is markedly reduced after optimization, whereas the decrease of distances between the next nearest neighbor oxygen atom from oxygen vacancy and hafnium is less. The change of local crystal lattice is caused by optimized oxygen vacancy for it significantly changes the local lattice, but rarely influences the far lattice. Deep energy level and density of electron states in conduction band are contributed by Hf atoms, while the density of electron states in valence band is contributed by O atoms. The local density of electron states in each element and the total density of electron states in the optimization system are all larger than those in the system without optimization, and the sum of the local densities of electron states is less than the total density of electron states. The trapped charges are moving mainly around the oxygen vacancy and the adjacent atoms of oxygen in the optimization system, but the charges are without optimization throughout the system. The local energy of charge is increased in optimized defect system, while the local energy of charge is conspicuously reduced in the system without optimization, i.e. lattice variation without saturation characteristic has a large effect on the local energy of charge. Results further prove that the change of crystal lattice induced by oxygen vacancy has strong ability to capture charge, which helps improve the features of memory.

Effects of Oxygen Vacancy on the Electronic Structure of Monoclinic HfO2 and Its Defect Energy States by the First Principles Calculation

Properties of oxygen vacancy in W-doped monoclinic HfO2 based on the first principle calculations

First Principles Calculations of Oxygen Vacancy Passivation by Fluorine in Hafnium Oxide

Structural Polymorphism Kinetics Promoted by Charged Oxygen Vacancies in HfO$_2$

Effect of Oxygen Vacancy on Lattice and Electronic Prop Erties of HfO2 by Means of Density Function Theory Study

Effects of Ionic Doping on the Behaviors of Oxygen Vacancies in HfO2 and ZrO2: A First Principles Study

Effect of Oxygen Vacancy on the Electronic Structure and Electrical Properties of HfO2/Si Interface

Charged Oxygen Vacancy Induced Ferroelectric Structure Transition in Hafnium Oxide

First-principles study of the effects of Hf doping and different valence state O vacancies on the optoelectronic properties of SnO 2

Influence of Oxygen Vacancy on the Electronic Structure of Cacu3ti4o12 and Its Deep-Level Vacancy Trap States by First-Principle Calculation

Energetics And Electronic Structure Of Aluminum Point Defects In Hfo2: A First-Principles Study

First Principle Study on Oxygen Vacancy Induced Ferroelectricity in HFO2-Based Ferroelectrics

Structural Polymorphism Kinetics Promoted by Charged Oxygen Vacancies in

Ferroelectric structural transition in hafnium oxide induced by charged oxygen vacancies

Comparative study of defect energetics in HfO2 and SiO2

Stability of Oxygen Vacancy at Metal/oxide Interfaces

Oxygen-related defects in amorphous HfO2 gate dielectrics

Effects of Y Doping on the Structural Stability and Defect Properties of Cubic HfO2

Theoretical investigation on hydrogen-related oxide traps in HfO2 gate dielectrics: An ab-initio study

Stability of Oxygen Vacancies at Metal/oxide Interfaces.

Theoretical Formation Energy of Oxygen-Vacancies in Oxides