Abstract:Defect-engineering is a frequent approach to modify the material's properties. The selection of the dopant is generally carried out by its similarity (size and valence state) to the host ions, which can only slightly tune the properties of the host materials. In this work, opposing the traditional doping approach, sterically mismatched 'difficult-to-dope' ions featuring different ionic sizes and valence states were introduced as dopants, leading to local symmetry breaking. For this purpose, a non-ferroelectric tetragonal-HfO2 with a 4/mmm point group was doped with sterically mismatched Y3+ / La3+ ions. The larger ionic radius of Y and La (106 pm and 110 pm, respectively) have been expected to create a large point-defect-induced local symmetry breaking in the centrosymmetric tetragonal environment. Density-functional-theory-based ab initio calculations were performed to investigate the defect structure, where the local symmetry breaking and structural frustration caused by Y3+ and La3+ dopant resulted in the total atomic displacement of 2.769 and 3.507 Å, within the centrosymmetric environment. Importantly, this structural perturbation generates noticeable defect-induced dipole moments of 7.07 Debye and 9.62 Debye for Y3+ and La3+, respectively. The resultant dipole is attributed to the total ionic displacement of neighboring ions caused by local symmetry breaking through sterically mismatched ions with different ionic sizes (the larger the ionic size, the larger the ionic displacement and total dipole). In addition, La and Y co-doped HfO2 was also investigated, where the co-doping led to a total dipole in the range of 7.12 - 8.68 Debye. The defect-dipolar behavior may provide another insight to the understanding of the polarization behavior in hafnium-based oxide as well as for manipulating material properties.

Energetics And Electronic Structure Of Aluminum Point Defects In Hfo2: A First-Principles Study

Effects of Al Addition on the Native Defects in Hafnia

Comparative study of defect energetics in HfO2 and SiO2

Al-induced Reduction of the Oxygen Diffusion in HfO2: Anab Initiostudy

Harnessing Point-defect Induced Local Symmetry Breaking in the tetragonal-HfO2 System through Sterically Mismatched Ion Doping

First-principles Calculations of the Electronic Structure and Defects of Al2O3

Energetics of point defects in aluminum via orbital-free density functional theory

First-Principles Study on Electronic Structure of Gd-Doped HfO2 High K Gate Dielectrics

Oxygen defects in Fe-substituted Tl-system superconductors

Theoretical investigation of intrinsic point defects and the oxygen migration behavior in rare earth hafnates

Defect energetics of cubic hafnia from quantum Monte Carlo simulations

First-principles study of structural, vibrational and lattice dielectric properties of hafnium oxide

Structural, Mechanical, Electronic Properties of Refractory Hf–Al Intermetallics from SCAN Meta-Gga Density Functional Calculations

First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide

Properties of oxygen vacancy in W-doped monoclinic HfO2 based on the first principle calculations

First-principles study on the effects of Er/Hf ratio on the properties of L12-Al3(Er,Hf)

Effects of Y Doping on the Structural Stability and Defect Properties of Cubic HfO2

Effect Of Al Addition On The Microstructure And Electronic Structure Of Hfo2 Film

The Conductive Path in HfO2: First Principles Study

Oxygen-related defects in amorphous HfO2 gate dielectrics

Intrinsic Defects in and Electronic Properties of Θ-Al13fe4: an Ab Initio DFT Study