Abstract:We investigated the effects of oxygen vacancies on the ferroelectric behaviors of the Al:HfO 2 films annealed in O 2 and N 2 atmosphere. The XPS results showed that the O/Hf atomic ratio were 1.88 for N 2 -annealed samples and 1.96 for O 2 -annealed samples, respectively, implying an neutralization of oxygen vacancies during O 2 atmosphere annealing. The O 2 -annealed films exhibited an increasing remanent polarization from 23 μC/cm 2 to 28 μC/cm 2 after 10 4 cycling, with a negligible leakage current density of ~2 μA/cm 2 , while the remanent polarization decreased from 29 μC/cm 2 to 20 μC/cm 2 after cycling in the N 2 -annealed films, with its severe leakage current density decreasing from ~1200 μA/cm 2 to ~300μA/cm 2 . A phase transition from the metastable tetragonal(t) phase to the low-temperature stable orthorhombic(o) phase and monoclinic(m) phase was observed to undergo during annealing. As a result of the fierce competition between the t-to-o transition and the t-to-m transition, clear grain boundaries of several several ruleless atomic layers were formed in the N 2 -annealed samples. On the other hand, the transition of t-phase to the low-temperature stable phase were found to be hindered by the neutralization of oxygen vacancies, with almost continuous grain boundaries observed. The results elucidate the phase transformation affected by oxygen vacancies in the Al:HfO 2 films, which may be helpful for the preparation of HfO2-based film with excellent ferroelectricity.

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First Principles Calculations of Oxygen Vacancy Passivation by Fluorine in Hafnium Oxide

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Contribution of oxygen vacancies to the phase transition and ferroelectricity of the Al:HfO 2 films

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Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition