Abstract:Group Iota Iota Iota nitrides are crucial semiconductors used in optoelectronic applications such as light-emitting diodes, but their efficiency is still limited due to some material problems including dislocations, strain, composition fluctuations and optical polarization properties. Nitride nanowire (NW) structures, showing advantages in these aspects, are a possible method to address the shortcomings of bulk materials and improve device performances. Here we investigated the manipulation of polarization characteristics in wurtzite Iota Iota Iota-nitride NWs by controlling the diameter and strain using first-principles calculations. The inversion of valence bands between heavy/light hole and crystal-field split-off hole is induced with decreasing the diameter of AlN and InN NWs, which causes the switch of polarization characteristics from transverse-magnetic (TM) mode of bulk AlN (transverse-electric (TE) mode of bulk InN) to TE mode of small-diameter AlN NWs (TM mode of small-diameter InN NWs, i.e. linearly polarized emission). Moreover, we also obtained the linearly TM polarized emission in AlN and GaN NWs by applying the compressive strain along the NW axis. The physical origin of the polarization inversion is the variation of the structural parameter mu in NWs. Our results illuminate the polarization properties of wurtzite Iota Iota Iota-nitride NWs and pave the way for their future optoelectronic devices.

Aligned InN nanofingers prepared by the ion-beam assisted filtered cathodic vacuum arc technique

Polycrystalline InN thin films prepared by ion-beam-assisted filtered cathodic vacuum arc technique

Structural and optical properties of wurtzite InN grown on Si(111)

Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods

Enhanced Photoluminescence and Field-Emission Behavior of Vertically Well Aligned Arrays of In-Doped Zno Nanowires

Synthesis and Characterization of Single-Crystal Indium Nitride Nanowires

Bulk-quantity synthesis of single-crystalline indium nitride nanobelts

Optimization of the structural and optical quality of InN nanowires on Si(111) by molecular beam epitaxy

Synthesis, Microstructure, Growth Mechanism and Photoluminescence of High Quality [0001]-Oriented Inn Nanowires and Nanonecklaces

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

Template-assisted synthesis of ordered single crystal InN nanowires

Vertically Aligned Tin-Doped Indium Oxide Nanowire Arrays: Epitaxial Growth And Electron Field Emission Properties

Chemical Vapor Deposition Growth of Inn Nanostructures: Morphology Regulation and Field Emission Properties

Large-scale cubic InN nanocrystals by a combined solution- and vapor-phase method under silica confinement

Characteristics and Fabrications of InN Nanowire Material

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

Manipulation of Polarization Characteristics in Wurtzite ΙΙΙ-nitride Nanowires for Linearly Polarized Emission

Study of surface morphology control and investigation of hexagonal indium nitride nanorods grown on GaN/sapphire substrate

High-Precision Determination of Lattice Constants and Structural Characterization of Inn Thin Films

Infrared Stimulated Emission with an Ultralow Threshold from Low-Dislocation-density InN Films Grown on a Vicinal GaN Substrate

Energy-Dependent Time-Resolved Photoluminescence of Self-Catalyzed InN Nanocolumns