Abstract:Stacks of a few intrinsic tunnel junctions were micro-fabricated on the surface of Bi-2212 single crystals. The number of junctions in a stack was tailored by progressively increasing the height of the stack by ion-beam etching, while its tunneling characteristics were measured in-situ in a vacuum chamber for temperatures down to ~13 K. Using this in-situ etching/measurements technique in a single piece of crystal, we systematically excluded any spurious effects arising from variations in the junction parameters and made clear analysis on the following properties of the surface and inner conducting planes. First, the tunneling resistance and the current-voltage curves are scaled by the surface junction resistance. Second, we confirm that the reduction in both the gap and the superconducting transition temperature of the surface conducting plane in contact with a normal metal is not caused by the variation in the doping level, but is caused by the proximity contact. Finally, the main feature of a junction is not affected by the presence of other junctions in a stack in a low bias region.

Microwave Responses of an Insular Intrinsic Josephson Junction Stack Fabricated from Bi-Sr-Ca-Cu-O Single Crystal

Stacks of Intrinsic Josephson Junctions Singled out from Inside Bi2sr2cacu2o8+X Single Crystals

Investigation of microwave responses in BSCCO-2212 intrinsic Josephson junctions up to short millimeter wavebands

Double-Side Fabrication Process and Millimeter Wave Response of Intrinsic Josephson Junctions

Intrinsic Josephson Junctions: Integrated Circuits and Possible Applications

Intrinsic Josephson Junction Arrays Containing Only a Few Junctions

Resistively shunted intrinsic Josephson junctions and their high frequency responses at a 3 mm waveband

Fabrication and Characteristics of Intrinsic Josephson Junctions in Bi 2 Sr 2 CaCu 2 O 8+x Single Crystals

Microwave Responses of BSCCO-2212 Intrinsic Josephson Junctions at Frequencies Up to 100 GHz

Microwave-induced Current Steps in Intrinsic Josephson Junctions Patterned on Bi2Sr2CaCu2O8 Single Crystal

Intrinsic Josephson Junctions in Bisrcacuo-2212: Recent Progress

Exploring the Versatility of Double-Sided Fabrication of Intrinsic Josephson Junctions

Individual Shapiro Steps Observed In Resistively Shunted Intrinsic Josephson Junctions On Bi2sr2cacu2o8+X Single Crystals

Shapiro Steps Observed in Annular Intrinsic Josephson Junctions at Low Microwave Frequencies

Progressive evolution of tunneling characteristics of in-situ fabricated intrinsic Josephson junctions in Bi_2Sr_2CaCu_2O_{8+delta} single crystals

Three-Dimensional Arrays of Bisrcacuo-2212 Intrinsic Josephson Junctions and Zero-Crossing Shapiro Steps at 760 Ghz

Intrinsic Josephson Junction Array with Typical Tunneling Characteristics in Oxygen-Deficient Ybacuo Thin Films

Surface Junction in Bi_2Sr_2CaCu_2O_8+d Single Crystals

Fluxons in Long and Annular Intrinsic Josephson Junction Stacks

Observation of Shapiro Steps and Spectroscopic Applications of Stacked Intrinsic Josephson Junctions Up to the Terahertz Region

Collective Responses of Bi-2212 Stacked Junction to 100 Ghz Microwave Radiation under Magnetic Field Oriented along the C-Axis