Abstract:Recently, several studies have been done by various groups to understand the memory effects behind organic materials, which include understanding in terms of conformation changes, conjugation modification and oxidation-reduction process. In this paper, a WORM (write-once read-many times) memory device using a new polymer material 2-(9H-carbazol-9-yl)ethyl methacrylate (PCz) containing carbazole donor group has been demonstrated. The device uses a MIM (metal-insulator-metal) structure with ITO coated glass as bottom electrode, the synthesized polymer material PCz as the active layer and Al as the top electrode. The toluene solution of PCz was spin-coated on the ITO, followed by solvent removal in a vacuum chamber. Finally, Al was thermally evaporated through shadow mask onto the PCz film. The memory effect of PCz was observed in the I-V characteristic of the MIM structure. The as-fabricated device is found to be in its OFF state, and can be programmed to ON state which is not reversible. The WORM device exhibits a high ON/OFF current ratio of up to 10 6 , and shows a good retention time for both the ON and OFF states which can be sustained within a 24 h timeframe, and extrapolated to sustain for another 10 years. The effect of continuous read pulse on the ON and OFF states was evaluated and no resistance degradation is observed for read cycles up to 10 7 times. By comparing the electrical characteristics of PCz and PVK as well as their optimized geometry simulation corresponding to their minimized energy states, the memory effect or bi-stable states of PCz can be attributed to the long linker between the carbazole groups and backbone present in PCz which play a part in the conduction mechanism.

Fabrication of Hybrid Bi-Stable Device Based on CdSe Quantum Dots/Poly(N-Vinylecarbasole) Composite and Its Carrier Transport

Organic/inorganic Composite Electrical Bistable Devices Based on Composite of Poly(n-Vinylcarbazole)and Lead Sulfide Nanocrystals

Carrier Transport Mechanisms of Bistable Memory Devices Fabricated Utilizing Core–shell CdSe/ZnSe Quantum-Dot/multi-walled Carbon Nanotube Hybrid Nanocomposites

Carrier Transport and Memory Mechanisms of Multilevel Resistive Memory Devices with an Intermediate State Based on Double-Stacked Organic/Inorganic Nanocomposites

Fabrication and Electrical Properties of a Hybrid Bistable Device Based on C_(60)/PMMA Nanocomposite

Nonvolatile Electrical Bistability and Operating Mechanism of Memory Devices Based on CdSe/ZnS Nanoparticle/polymer Hybrid Composites

Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots

High-Performance Nonvolatile Organic Transistor Memory Using Quantum Dots-Based Floating Gate

Highly-stable Memristive Devices Based on Poly(methylmethacrylate): CsPbCl3 Perovskite Quantum Dot Hybrid Nanocomposites

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Enhancing Resistive Switching Performance and Ambient Stability of Hybrid Perovskite Single Crystals via Embedding Colloidal Quantum Dots

Organic Bistable Devices Based on Core/shell CdSe∕ZnS Nanoparticles Embedded in a Conducting Poly(n-Vinylcarbazole) Polymer Layer

Organic Field-Effect Transistor Memory Device Based on an Integrated Carbon Quantum Dots/Polyvinyl Pyrrolidone Hybrid Nanolayer

Resistive Switching Memory Based on Graphene Quantum Dot Composites and its Conductive Mechanism

Achievement Of Two Logical States Through A Polymer/Silicon Interface For Organic-Inorganic Hybrid Memory

Single Active-Layer Structured Dual-Function Devices Using Hybrid Polymer–quantum Dots

Improved Stability and Performance of All Inorganic Perovskite Quantum Dots Synthesized Directly with N-alkylmonoamine Ligands for Light-Erasable Transistor Memory

Highly-reproducible Nonvolatile Memristive Devices Based on Polyvinylpyrrolidone: Graphene Quantum-Dot Nanocomposites

Nonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer.

Bi-stable State for WORM Application Based on Carbazole-containing Polymer

Low-voltage All-Inorganic Perovskite Quantum Dot Transistor Memory