Study of Characteristics of Photolithography Medium with Sub-Wavelength Resolution

王向贤,石洪菲,张斗国,明海
DOI: https://doi.org/10.3969/j.issn.1001-9731.2012.09.022
2012-01-01
Journal of Functional Biomaterials
Abstract:Using 365nm wave band light sources and SEM, step tester, AFM and ellipsometry, the chemical and physical characteristics, those are developing velocity, contrast, film thickness and refractive index, of photolithography medium X AR-N 7700/30 resist with sub-wavelength resolution are studied. The developing velocity of the unexposed part of the resist is 23.15nm/s, and that is 1.85nm/s for the exposed part. The contrast of the resist is as high as 2.5. The thickness of the spin coating resist film can reach to 45nm, when the resist is dilu- ted to weight concentration 30%.
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