Synthesis of CdS/Ag Particles in Phosphate Glass by UV Beam Irradiation

Feng-bin YU,Fu-yi CHEN,Wan-qi JIE,Tao WANG
DOI: https://doi.org/10.3321/j.issn:1000-7032.2007.01.019
2007-01-01
Chinese Journal of Luminescence
Abstract:Glasses doped with nanosized Ⅱ-Ⅵ semiconductor particles such as CdS or metals like Ag have attracted much attention because of their large non-linear optical properties. Meanwhile, semiconductor/metal hybrid particles have also been suggested as a scheme to provide substantial further enhancement of both the optical non-linear and the figure of merit(χ3/absorption).Glasses doped with large number of silver particles (~1% additional in mass fraction) were prepared by a glass precipitation method and heat-treatment process after UV irradiation.Their structure was studied by X-ray diffraction (XRD) and high-resolution scan electron microscopy (HRSEM). Optical properties were researched by absorption spectra and PL spectra.HRSEM pictures of CdS/Ag clearly indicated that all crystallites are uniformly distributed in the glass matrix with 1 μm in radius and consist of clusters of small particles with size of 0.5 μm. The XRD results showed that samples with UV irradiation and thermal treatment exhibit diffraction peaks of silver and CdS, samples with thermal treatment only exhibit peaks of CdS particles, while samples without thermal treatment were nearly amorphous type.The absorption spectra of CdS/Ag particles show a typical surface plasmon resonance feature at 420 nm and a peak at 600 nm which was attributed to the CdS, while samples with CdS particles only exhibit a peak at around 480 nm, and samples without thermal treatment have a peak at 320 nm which may be caused by slight crystallization of the CdS nanocrystallites during quenching. The PL peak of the glasses doped with CdS consists of three peaks. However, in CdS/Ag doped glass, the CdS PL peak was vanished. In order to explain this phenomenon, a resonant energy transfer mechanism was proposed.The formation mechanism of Ag particles by UV irradiation was discussed. The results indicated that the electron on the semiconductor surface can reduce silver ions upon the irradiation of the glass and lead to formation of silver particles, accompanying with the capture of the holes by the surface defects.
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