Abstract:In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate for GaN and related alloys, the availability of high-quality large bulk single crystals, the strong luminescence demonstrated in optically pumped lasers and the prospects of gaining control over its electrical conductivity have led a large number of groups to turn their research for electronic and photonic devices to ZnO in its own right. The high electron mobility, high thermal conductivity, wide and direct band gap and large exciton binding energy make ZnO suitable for a wide range of devices, including transparent thin-film transistors, photodetectors, light-emitting diodes and laser diodes that operate in the blue and ultraviolet region of the spectrum. In spite of the recent rapid developments, controlling the electrical conductivity of ZnO has remained a major challenge. While a number of research groups have reported achieving p-type ZnO, there are still problems concerning the reproducibility of the results and the stability of the p-type conductivity. Even the cause of the commonly observed unintentional n-type conductivity in as-grown ZnO is still under debate. One approach to address these issues consists of growing high-quality single crystalline bulk and thin films in which the concentrations of impurities and intrinsic defects are controlled. In this review we discuss the status of ZnO as a semiconductor. We first discuss the growth of bulk and epitaxial films, growth conditions and their influence on the incorporation of native defects and impurities. We then present the theory of doping and native defects in ZnO based on density-functional calculations, discussing the stability and electronic structure of native point defects and impurities and their influence on the electrical conductivity and optical properties of ZnO. We pay special attention to the possible causes of the unintentional n-type conductivity, emphasize the role of impurities, critically review the current status of p-type doping and address possible routes to controlling the electrical conductivity in ZnO. Finally, we discuss band-gap engineering using MgZnO and CdZnO alloys.

Development on Theories and Experiments of p-type ZnO

Recent Advances in Research on p-Type ZnO

p-Type ZnO materials: Theory, growth, properties and devices

ZnO with p-Type Doping: Recent Approaches and Applications

Development of P-Type ZnO Film Prepared by with Group-V Elements Doping

Research Progress on Deposition and Doping Techniques of p-Type ZnO Thin Films

Doping Mechanism and Preparing Technology of P-Type ZnO

Recent progress of the native defects and p-type doping of zinc oxide

Recent progress on p-type ZnO films

Research Progress on P-Type ZnO Synthesized by Solution Method

High-quality ZnO Growth, Doping, and Polarization Effect

Research Progress in the p-type Doping of ZnO Nanomaterials

Recent Developments of Zno-Based P-Type Transparent Conductive Oxide Thin Films

P-Type ZnO Films Made by Atomic Layer Deposition and Ion Implantation

Research Progress in p-Type ZnO and ZnO-Based Electroluminescent Devices

Review on intrinsic defects,p-type doping effects, and novel functional devices based on ZnO films

The research progress of p-type ZnO and ZnO p-n homojunctions

Fundamentals of zinc oxide as a semiconductor

Advances in Research on ZnO-base Semiconductor——Point Defect,Doping and Contact

The P-Type ZnO Thin Films Obtained by a Reversed Substitution Doping Method of Thermal Oxidation of Zn 3 N 2 Precursors

Research Progress in ZnO Single-Crystal: Growth, Scientific Understanding, and Device Applications