Abstract:Computer simulations have a wide range of applications in crystallization of which crystal habit prediction is one of the most important. In the absence of routine experimental methods, computer simulations can provide a detailed picture of the kinetics of crystallization. The mechanism of crystal growth from solutions is subject to different processes. Present computational methods available as part of commercially available modeling software are based upon either the Bravais–Friedel–Donnay–Harker (BFDH), the attachment energy (AE) or the surface energy models and do not account for the influence of the growth environment of the crystal upon its growth. In order to control the growth of crystals and therefore their habit, it is necessary to understand the factors that govern individual face growth rates. Since crystal growth depends upon mass transport to the surface of the crystal whenever crystal growth occurs in solution, it is reasonable to assume that a quantitative description of the mass transport at the solid liquid interface can give useful insight concerning the calculation of face growth rates. If crystallization takes place in the melt, consideration should be focused on heat transfer. Here, the determination of molecular scale features of crystal growth and a road map how to simulate face growth rates under consideration of the growth environment is presented. Molecular dynamics simulations are employed to study diffusion coefficients. The two examples presented here are benzophenone and hydroquinone. The one component system is considered a melt and computer experiments are performed on the system and characteristic changes of the transport parameters depending upon variations in the external factors, such as temperature level, simulation time, number of molecules in the amorphous cell, and force fields used in the simulations. After acquiring enough simulation experience and eliminating unsuitable system conditions a solution (solute-solvent) was simulated and effects of changes of other system parameters such as supersaturation level were investigated. The data obtained from these simulations are used to calculate the transport properties of the molecules under the given conditions and are compared to the results of the empirical equations which are available in the literature. Data obtained from these simulations producing diffusion coefficient values are used to correlate to the calculations of face growth rates by considering the ambient system conditions. Finally, depending upon the value of the mass transfer coefficients, the process controlling solution growth is defined and face growth rates are calculated depending upon the process which limits the face growth.

The relation between rough and flat growth of crystal faces: an effective approach to volume transport resistances

Modeling of Diffusion for Crystal Growth

Solution of the growth equation for asymmetric crystal faces

Modeling rough surfaces as a strategy to control the crystal quality, spatial and size distribution in semiconductor nanoparticles growth: A theoretical-experimental approach

Modeling of the shape of polyethylene oxide single crystals and determination of the kinetic crystallization parameters: Theoretical and experimental approaches

Curved Faces in Polymer Crystals with Asymmetrically Spreading Growth Patches

Atomic scale modeling of vicinal surface growth from melts using the phase-field crystal method

Morphologies and dynamics of free surfaces of crystals composed of active particles

Progress In The Studies Of Interfacial Energy And Kinetics Of Crystal Growth/Dissolution

Analysis of crystal habits bounded by asymmetrically curved faces: Polyethylene oligomers and poly(vinylidene fluoride)

Beyond the Surface: Interconnection of Viscosity, Crystal Growth, and Diffusion in Ge25Se75 Glass-Former

On anisotropy function in crystal growth simulations using Lattice Boltzmann equation

Faceting of Equilibrium and Metastable Nanostructures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes

Faceted-rough surface in the non-equilibrium steady state near equilibrium

Monte-Carlo Simulation of Crystal Growth with Diffusion Employing an Anisotropic Model

A Low-Dimensional Crystal Growth Model on an Isotropic and Quasi-Free Sustained Substrate*

Continuum Modeling of Surface Roughening in Heteroepitaxial Structures Based on Phase Field Theory

A Volume Radiation Heat Transfer Model for Czochralski Crystal Growth Processes

A Multi-Component Mass Transfer Rate Based Model for Simulation of Non-Equilibrium Growth of Crystals

Faceting Simulation of Bulk Crystal Growth with 2d Nucleation and Screw Dislocation Theory

Stochastic process model for interfacial gap of purely normal elastic rough surface contact