Abstract:A 1200V 4H-SiC lateral double-diffused MOSFET (LDMOS) featuring a lightly doped P-top layer at the source side, and a high-doped N-well layer arranged between the channel and P-top layer is proposed. In order to promote the simulation accuracy, Sentaurus Process Tool that can simulate the oxidation, ion implantation, annealing, diffusion, etc. is used for structure establishment in this letter. In the ON-state, the electric potential at the end of the channel can be modulated and lowered due to the existence of P-top layer. The P-top layer can shield the voltage from the drain side, which results in the reduced saturation current ( $text{I}_{text {dsat}}$ ), especially at high drain-source voltage ( $text{V}_{text {DS}}$ ). The introduction of the N-well layer ensures that the P-top layer has almost no impact on the linear current ( $text{I}_{text {dlin}}$ ). Compared with the conventional SiC LDMOS, the $text{I}_{text {dsat}}$ at $text{V}_{text {DS}},,=400text{V}$ of the proposed LDMOS decreases by 24.2% with no degradation in the $text{I}_{text {dlin}}$ and the OFF-state breakdown voltage (BV). Benefiting from the suppressed $text{I}_{text {dsat}}$ , the proposed SiC LDMOS achieves a ON-state BV 366V higher than that of the conventional SiC LDMOS at the gate-source voltage of 20V. Since the short-circuit capability of the SiC power devices is much sensitive to the $text{I}_{text {dsat}}$ -/tex-math>, the 24.2% reduction in $text{I}_{text {dsat}}$ can predict a considerable enhanced short-circuit capability. Simulation results show that the short-circuit withstand time can be improved by 105%.

An Accurate Semi-Empirical Saturation Drain Current Model for LDD N-Mosfet

A Carrier-Based Analytic Drain Current Model Incorporating Velocity Saturation for Undoped Surrounding-Gate MOSFETs

A Unified Drain Current Model for Nanoscale Double-Gate and Surrounding-Gate MOSFETs Incorporating Velocity Saturation

Analytical Current Model for Long-Channel Junctionless Double-Gate Mosfets

A Comparison Study of Velocity Saturation Models for Gate-all-around MOSFETs

A More Accurate Potential-Based Drain Current Model for Bulk-Mosfets

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Fully depleted short-channel SOI LDD/LDS MDSFET model for VLSI circuits analysis

Device Design for Low Power Electronics with Accurate Deep Submicrometer LDD-MOSFET Models

Comparison and insight into long-channel MOSFET drain current models

Accurate models for CMOS scaling and gate delay in deep sub-micron regime

New physical I-V model of deep-submicron FD SOI MOSFETs for analogue/digital circuit simulation

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes

New Mobility Model for Accurate Modeling of Transconductance in FDSOI MOSFETs

A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Simulation Study of A 1200V 4H-SiC Lateral MOSFET With Reduced Saturation Current

Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET

Computation Efficient Yet Accurate Surface Potential Based Analytic Model for Symmetric Dg Mosfets to Predict Current-Voltage Characteristics

A Carrier-Based Analytic Model for the Undoped Symmetric Double-Gate MOSFETs

Mosfet Carrier Mobility Model Based on Gate Oxide Thickness, Threshold and Gate Voltages